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@ARTICLE{Schroeder:14446,
      author       = {Schroeder, H. and Pandian, R. and Miao, J.},
      title        = {{R}esistive switching and changes in microstructure},
      journal      = {Physica status solidi / A},
      volume       = {208},
      issn         = {0031-8965},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {PreJuSER-14446},
      pages        = {300 - 316},
      year         = {2011},
      note         = {The authors would like to acknowledge the support of the
                      'Deutsche Forschungsgemeinschaft' (DFG) under the project #
                      SCHR 1126/1-1 and # SCHR 1126/1-2 within the SPP 1157.},
      abstract     = {The long-known resistive switching (RS) effect in thin film
                      metal/insulator/metal (MIM) stacks has gained tremendous
                      interest in the last decade because of promising properties
                      and geometries for a resistive memory device (ReRAM)
                      indicating a strong competition for DRAM and FLASH in future
                      ultra-high integrated circuits. In contrast to numerous
                      contributions for the electric behaviour and many, often
                      very detailed assumptions for the mechanisms, much less is
                      known about the microstructure and its relation to the
                      observed resistance changes, forming and switching. This
                      paper reports experiments combining electric measurements
                      with microstructure characterization in electron microscopes
                      for both, in situ and also ex situ (i.e. sequential). The
                      results, mainly on Pt/TiO2/Pt stacks, indicate mostly heavy
                      damage of the thin film microstructure associated with the
                      forming, although these damaged samples still show stable
                      unipolar and bipolar resistive switching. These findings are
                      discussed and compared to the scarce microstructure
                      information in the literature which is presented in a short
                      review at the end. From all the information it has to be
                      concluded that much more about the microstructure changes
                      related to resistive switching is urgently needed in order
                      to model the RS based on data instead of assumptions. (C)
                      2011 WILEY-VCH Verlag GmbH $\&$ Co. KGaA, Weinheim},
      keywords     = {J (WoSType)},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Materials Science, Multidisciplinary / Physics, Applied /
                      Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000288087100007},
      doi          = {10.1002/pssa.201026743},
      url          = {https://juser.fz-juelich.de/record/14446},
}