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@ARTICLE{Rosezin:14602,
      author       = {Rosezin, R. and Meier, M. and Breuer, U. and Kügeler, C.
                      and Waser, R.},
      title        = {{E}lectroforming and {R}esistance {S}witching
                      {C}haracteristics of {S}ilver-{D}oped {MSQ} {W}ith {I}nert
                      {E}lectrodes},
      journal      = {IEEE transactions on applied superconductivity},
      volume       = {10},
      issn         = {1051-8223},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {PreJuSER-14602},
      pages        = {338 - 343},
      year         = {2011},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {This paper reports on the resistance switching effect in
                      silver-doped methylsilsesquioxane (MSQ) thin films with Pt
                      top and bottom electrodes. Silver is thermally diffused into
                      MSQ films for different times and the results prove that
                      silver ions (or other oxidizable metal ions) are required in
                      the system, but not necessarily as one of the two
                      electrodes. SEM investigations at horizontal cells (gap
                      width 15-100 nm) show the formation of metallic
                      agglomerations in the gap. The forming process is found to
                      be electric-field driven and the filament resistance is
                      determined to be 30 Omega/nm. Under the assumption of
                      conical-shaped filament growth, the diameter of a filament
                      is calculated to 13.5 nm, which is in agreement with the SEM
                      observations. Memory device related tests on 100 x 100 nm(2)
                      cross junctions show unipolar switching up to 2000 times and
                      retention at 85 degrees C for at least 6 x 10(4) s.},
      keywords     = {J (WoSType)},
      cin          = {ZCH / IEK-5 / PGI-7 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ZCH-20090406 / I:(DE-Juel1)IEK-5-20101013 /
                      I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Nanoscience $\&$
                      Nanotechnology / Materials Science, Multidisciplinary /
                      Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000290537500020},
      doi          = {10.1109/TNANO.2010.2041669},
      url          = {https://juser.fz-juelich.de/record/14602},
}