TY  - JOUR
AU  - Rosezin, R.
AU  - Linn, E.
AU  - Nielen, L.
AU  - Bruchhaus, R.
AU  - Waser, R.
TI  - Integrated complementary resistive switches for passive high-density nanocrossbar arrays
JO  - IEEE Electron Device Letters
VL  - 32
SN  - 0741-3106
CY  - New York, NY
PB  - IEEE
M1  - PreJuSER-14739
SP  - 191 - 193
PY  - 2011
N1  - Record converted from VDB: 12.11.2012
AB  - Recently, the sneak-path obstacle in passive crossbar arrays has been overcome by the invention of complementary resistive switches (CRSs) consisting of two bipolar antiserially connected memristive elements. Here, we demonstrate the vertical integration of CRS cells based on Cu/SiO2/Pt bipolar resistive switches. CRS cells were fabricated and electrically characterized, showing high resistance ratios (R-off/R-on > 1500) and fast switching speed (< 120 mu s). The results are one step further toward the realization of high-density passive nanocrossbar-array-based gigabit memory devices.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000286677700027
DO  - DOI:10.1109/LED.2010.2090127
UR  - https://juser.fz-juelich.de/record/14739
ER  -