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@ARTICLE{Mnstermann:14910,
      author       = {Münstermann, R. and Menke, T. and Dittmann, R. and Mi, S.
                      and Jia, C.L. and Park, D. and Mayer, J.},
      title        = {{C}orrelation between growth kinetics and nanoscale
                      resistive switching properties of {S}r{T}i{O}3 thin films},
      journal      = {Journal of applied physics},
      volume       = {108},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-14910},
      pages        = {124504},
      year         = {2010},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {We deliberately fabricated SrTiO3 thin films deviating from
                      ideal stoichiometry and from two-dimensional layer-by-layer
                      growth mode, in order to study the impact of well pronounced
                      defect arrangements on the nanoscale electrical properties.
                      By combining transmission electron microscopy with
                      conductive-tip atomic force microscopy we succeeded to
                      elucidate the microstructure of thin films grown by pulsed
                      laser deposition under kinetically limited growth conditions
                      and to correlate it with the local electrical properties.
                      SrTiO3 thin films, grown in a layer-by-layer growth mode,
                      exhibit a defect structure and conductivity pattern close to
                      single crystals, containing irregularly distributed,
                      resistive switching spots. In contrast to this, Ti-rich
                      films exhibit short-range-ordered, well-conducting resistive
                      switching units. For Ti-rich films grown in a kinetically
                      more restricted island growth mode, we succeeded to identify
                      defective island boundaries with the location of tip-induced
                      resistive switching. The observed nanoscale switching
                      behavior is consistent with a voltage driven oxygen vacancy
                      movement that induces a local redox-based metal-to-insulator
                      transition. Switching occurs preferentially in defect-rich
                      regions, that exhibit a high concentration of oxygen
                      vacancies and might act as easy-diffusion-channels. (C) 2010
                      American Institute of Physics. [doi:10.1063/1.3520674]},
      keywords     = {J (WoSType)},
      cin          = {PGI-6 / PGI-7 / JARA-FIT / PGI-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-6-20110106 / I:(DE-Juel1)PGI-7-20110106 /
                      $I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-5-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000285768800118},
      doi          = {10.1063/1.3520674},
      url          = {https://juser.fz-juelich.de/record/14910},
}