%0 Journal Article
%A Blömers, Christian
%A Rieger, Torsten
%A Grap, T
%A Raux, M
%A Lepsa, Mihail Ion
%A Lüth, Hans
%A Grützmacher, Detlev
%A Schäpers, Thomas
%T Gate-induced transition between metal-type and thermally activated transport in self-catalyzed MBE-grown InAs nanowires
%J Nanotechnology
%V 24
%N 32
%@ 1361-6528
%C Bristol
%I IOP Publ.
%M FZJ-2014-00528
%P 325201 -
%D 2013
%X Electronic transport properties of InAs nanowires are studied systematically. The nanowires
%X are grown by molecular beam epitaxy on a SiOx-covered GaAs wafer, without using foreign
%X catalyst particles. Room-temperature measurements revealed relatively high resistivity and
%X low carrier concentration values, which correlate with the low background doping obtained by
%X our growth method. Transport parameters, such as resistivity, mobility, and carrier
%X concentration, show a relatively large spread that is attributed to variations in surface
%X conditions. For some nanowires the conductivity has a metal-type dependence on temperature,
%X i.e. decreasing with decreasing temperature, while other nanowires show the opposite
%X temperature behavior, i.e. temperature-activated characteristics. An applied gate voltage in a
%X field-effect transistor configuration can switch between the two types of behavior. The effect is
%X explained by the presence of barriers formed by potential fluctuations.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000322001100005
%R 10.1088/0957-4484/24/32/325201
%U https://juser.fz-juelich.de/record/150473