TY  - JOUR
AU  - Blömers, Christian
AU  - Rieger, Torsten
AU  - Grap, T
AU  - Raux, M
AU  - Lepsa, Mihail Ion
AU  - Lüth, Hans
AU  - Grützmacher, Detlev
AU  - Schäpers, Thomas
TI  - Gate-induced transition between metal-type and thermally activated transport in self-catalyzed MBE-grown InAs nanowires
JO  - Nanotechnology
VL  - 24
IS  - 32
SN  - 1361-6528
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2014-00528
SP  - 325201 -
PY  - 2013
AB  - Electronic transport properties of InAs nanowires are studied systematically. The nanowires
AB  - are grown by molecular beam epitaxy on a SiOx-covered GaAs wafer, without using foreign
AB  - catalyst particles. Room-temperature measurements revealed relatively high resistivity and
AB  - low carrier concentration values, which correlate with the low background doping obtained by
AB  - our growth method. Transport parameters, such as resistivity, mobility, and carrier
AB  - concentration, show a relatively large spread that is attributed to variations in surface
AB  - conditions. For some nanowires the conductivity has a metal-type dependence on temperature,
AB  - i.e. decreasing with decreasing temperature, while other nanowires show the opposite
AB  - temperature behavior, i.e. temperature-activated characteristics. An applied gate voltage in a
AB  - field-effect transistor configuration can switch between the two types of behavior. The effect is
AB  - explained by the presence of barriers formed by potential fluctuations.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000322001100005
DO  - DOI:10.1088/0957-4484/24/32/325201
UR  - https://juser.fz-juelich.de/record/150473
ER  -