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@ARTICLE{Blmers:150473,
      author       = {Blömers, Christian and Rieger, Torsten and Grap, T and
                      Raux, M and Lepsa, Mihail Ion and Lüth, Hans and
                      Grützmacher, Detlev and Schäpers, Thomas},
      title        = {{G}ate-induced transition between metal-type and thermally
                      activated transport in self-catalyzed {MBE}-grown {I}n{A}s
                      nanowires},
      journal      = {Nanotechnology},
      volume       = {24},
      number       = {32},
      issn         = {1361-6528},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2014-00528},
      pages        = {325201 -},
      year         = {2013},
      abstract     = {Electronic transport properties of InAs nanowires are
                      studied systematically. The nanowires are grown by molecular
                      beam epitaxy on a SiOx-covered GaAs wafer, without using
                      foreign catalyst particles. Room-temperature measurements
                      revealed relatively high resistivity and low carrier
                      concentration values, which correlate with the low
                      background doping obtained by our growth method. Transport
                      parameters, such as resistivity, mobility, and carrier
                      concentration, show a relatively large spread that is
                      attributed to variations in surface conditions. For some
                      nanowires the conductivity has a metal-type dependence on
                      temperature, i.e. decreasing with decreasing temperature,
                      while other nanowires show the opposite temperature
                      behavior, i.e. temperature-activated characteristics. An
                      applied gate voltage in a field-effect transistor
                      configuration can switch between the two types of behavior.
                      The effect is explained by the presence of barriers formed
                      by potential fluctuations.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000322001100005},
      doi          = {10.1088/0957-4484/24/32/325201},
      url          = {https://juser.fz-juelich.de/record/150473},
}