000150523 001__ 150523
000150523 005__ 20210129213213.0
000150523 037__ $$aFZJ-2014-00577
000150523 041__ $$aEnglish
000150523 1001_ $$0P:(DE-HGF)0$$aKamil, Sladek$$b0$$gmale
000150523 245__ $$aRealization of III-V semiconductor nano structures towards more efficient (opto-) electronic devices$$f2009-05-01 - 2013-04-30
000150523 260__ $$aJülich$$bPGI-9: Halbleiter-Nanoelektronik$$c2013
000150523 300__ $$a100
000150523 3367_ $$0PUB:(DE-HGF)11$$2PUB:(DE-HGF)$$aDissertation / PhD Thesis$$bphd$$mphd$$s1390298136_17899
000150523 3367_ $$02$$2EndNote$$aThesis
000150523 3367_ $$2DRIVER$$adoctoralThesis
000150523 3367_ $$2BibTeX$$aPHDTHESIS
000150523 3367_ $$2DataCite$$aOutput Types/Dissertation
000150523 3367_ $$2ORCID$$aDISSERTATION
000150523 500__ $$3POF3_Assignment on 2016-02-29
000150523 502__ $$aRWTH Aachen, Diss., 2013$$bDr.$$cRWTH Aachen$$d2013
000150523 520__ $$aSolid state electronics and their application in personal computers, smartphones, digital
cameras and entertainment devices (to name a few) have gained such a rapid progress that
it’s already barely imaginable how our future technological environment will evolve in the next
few years. In parallel, however, concerns about excessive use of the world’s limited natural
energy resources has led to a rethinking with respect to the design and production of future
electronics.
One of the most promising solutions to further improve the efficiency of electronics is the
combination of the well established silicon technology with III-V semiconductor nano structures
which have been extensively investigated in various fields for the last few decades. InAs nano
structures, in particular, are intrinsically conductive due to their characteristic conduction band
profile, caused by surface states. The materials high bulk carrier mobility gives rise to expect a
significant boost in efficiency of electronic devices that employ InAs nano structures.
In this work, three different aspects of device improvement are addressed: the exchange of
channel material in traditional CMOS, the development of new nanostructure based concepts
and the use of direct band gap properties for more cost-effective sensing devices. The
established SA MOVPE of III-V nano structures on III-V substrates serves as a starting point.
Systematic experiments are conducted in order to address several significant questions
regarding the suitability of III-V nano structures as building blocks for future electronic devices.
It is found that a large variety of free-standing InAs nanowires with different properties can be
produced in an ordered and controlled fashion. The results show that uniform InAs nanowires
with a high aspect ratio can be produced selectively on GaAs(111)B and GaAs(110) oriented
surfaces, the latter being also a natural cleaved edge direction of industrially used Si(001)
substrates. In addition, very thin InAs nanowires with diameters down to 20 nm are obtained
as a side effect on non-structured cleaved-edge sidewalls of GaAs(001). N-type doping with
disilane is found to have a general impact on the nanowire morphology, resulting in a reduced
height vs. diameter aspect ratio with an increased amount of doping applied during deposition.
It is observed that all wires exhibit an intrinsic conductivity with an ohmic behavior which is
further increased after doping. Also, the nanowire diameter is found to be a potential
parameter to tune their electronic properties. A series of experiments with different growth
parameters and the successive characterization of the nanowires‘ crystal structure reveal that
different group-V partial pressures affect the formation of stacking faults and the crystal‘s
wurtzite to zinc blende ratio. A significant step to combine the gained knowledge on controlled
bottom-up InAs nanowire fabrication and benefits of SA MOVPE in N2 ambient with current
silicon technology is the transition of InAs growth to silicon substrates. The technique of flow
modulated epitaxy is adopted from MOVPE growth in hydrogen ambient and adapted and
optimized for growth in N2 in order overcome the lack of polarity on silicon. As a result, InAs
nanowire growth on Si(111) is carried out with a high yield of vertical wires.
After the investigation of free standing InAs nanowires mainly for concepts exceeding
CMOS, a methodology for the deposition of lateral InAs nano structures on silicon by SA
MOVPE was presented, aimed towards the exchange of channel material in current planar
electronic devices. Growth parameters adopted from GaAs/InAs core-shell nanowire growth
are applied to a variety of differently oriented and patterned substrates. The obtained lateral
structures are characterized with respect to morphology, crystal structure and electronic
properties. High crystallinity and conductivity are found and discussed in comparison to the
results obtained from vertical nanowires.
Finally, quantum cascade structures based on ternary III-V semiconductors with high indium
content are investigated with respect to single mode emission for gas sensing applications. It
is found that curved laser waveguides are capable of single mode emission which is explained
by the interaction of coupled cavities, resulting in strong side mode suppression. The
monolithic approach without need for complicated sample processing has tremendous
potential for the fabrication of cost effective and portable gas sensing devices.
000150523 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000150523 650_7 $$0V:(DE-588b)4012494-0$$2GND$$aDissertation$$xDiss.
000150523 8564_ $$uhttp://darwin.bth.rwth-aachen.de/opus3/volltexte/2013/4779/
000150523 909CO $$ooai:juser.fz-juelich.de:150523$$pVDB
000150523 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-HGF)0$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000150523 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000150523 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000150523 9141_ $$y2013
000150523 920__ $$lno
000150523 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000150523 980__ $$aphd
000150523 980__ $$aVDB
000150523 980__ $$aUNRESTRICTED
000150523 980__ $$aI:(DE-Juel1)PGI-9-20110106