% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@PHDTHESIS{Kamil:150523,
      author       = {Kamil, Sladek},
      title        = {{R}ealization of {III}-{V} semiconductor nano structures
                      towards more efficient (opto-) electronic devices},
      school       = {RWTH Aachen},
      type         = {Dr.},
      address      = {Jülich},
      publisher    = {PGI-9: Halbleiter-Nanoelektronik},
      reportid     = {FZJ-2014-00577},
      pages        = {100},
      year         = {2013},
      note         = {RWTH Aachen, Diss., 2013},
      abstract     = {Solid state electronics and their application in personal
                      computers, smartphones, digital cameras and entertainment
                      devices (to name a few) have gained such a rapid progress
                      that it’s already barely imaginable how our future
                      technological environment will evolve in the next few years.
                      In parallel, however, concerns about excessive use of the
                      world’s limited natural energy resources has led to a
                      rethinking with respect to the design and production of
                      future electronics. One of the most promising solutions to
                      further improve the efficiency of electronics is the
                      combination of the well established silicon technology with
                      III-V semiconductor nano structures which have been
                      extensively investigated in various fields for the last few
                      decades. InAs nano structures, in particular, are
                      intrinsically conductive due to their characteristic
                      conduction band profile, caused by surface states. The
                      materials high bulk carrier mobility gives rise to expect a
                      significant boost in efficiency of electronic devices that
                      employ InAs nano structures. In this work, three different
                      aspects of device improvement are addressed: the exchange of
                      channel material in traditional CMOS, the development of new
                      nanostructure based concepts and the use of direct band gap
                      properties for more cost-effective sensing devices. The
                      established SA MOVPE of III-V nano structures on III-V
                      substrates serves as a starting point. Systematic
                      experiments are conducted in order to address several
                      significant questions regarding the suitability of III-V
                      nano structures as building blocks for future electronic
                      devices. It is found that a large variety of free-standing
                      InAs nanowires with different properties can be produced in
                      an ordered and controlled fashion. The results show that
                      uniform InAs nanowires with a high aspect ratio can be
                      produced selectively on GaAs(111)B and GaAs(110) oriented
                      surfaces, the latter being also a natural cleaved edge
                      direction of industrially used Si(001) substrates. In
                      addition, very thin InAs nanowires with diameters down to 20
                      nm are obtained as a side effect on non-structured
                      cleaved-edge sidewalls of GaAs(001). N-type doping with
                      disilane is found to have a general impact on the nanowire
                      morphology, resulting in a reduced height vs. diameter
                      aspect ratio with an increased amount of doping applied
                      during deposition. It is observed that all wires exhibit an
                      intrinsic conductivity with an ohmic behavior which is
                      further increased after doping. Also, the nanowire diameter
                      is found to be a potential parameter to tune their
                      electronic properties. A series of experiments with
                      different growth parameters and the successive
                      characterization of the nanowires‘ crystal structure
                      reveal that different group-V partial pressures affect the
                      formation of stacking faults and the crystal‘s wurtzite to
                      zinc blende ratio. A significant step to combine the gained
                      knowledge on controlled bottom-up InAs nanowire fabrication
                      and benefits of SA MOVPE in N2 ambient with current silicon
                      technology is the transition of InAs growth to silicon
                      substrates. The technique of flow modulated epitaxy is
                      adopted from MOVPE growth in hydrogen ambient and adapted
                      and optimized for growth in N2 in order overcome the lack of
                      polarity on silicon. As a result, InAs nanowire growth on
                      Si(111) is carried out with a high yield of vertical wires.
                      After the investigation of free standing InAs nanowires
                      mainly for concepts exceeding CMOS, a methodology for the
                      deposition of lateral InAs nano structures on silicon by SA
                      MOVPE was presented, aimed towards the exchange of channel
                      material in current planar electronic devices. Growth
                      parameters adopted from GaAs/InAs core-shell nanowire growth
                      are applied to a variety of differently oriented and
                      patterned substrates. The obtained lateral structures are
                      characterized with respect to morphology, crystal structure
                      and electronic properties. High crystallinity and
                      conductivity are found and discussed in comparison to the
                      results obtained from vertical nanowires. Finally, quantum
                      cascade structures based on ternary III-V semiconductors
                      with high indium content are investigated with respect to
                      single mode emission for gas sensing applications. It is
                      found that curved laser waveguides are capable of single
                      mode emission which is explained by the interaction of
                      coupled cavities, resulting in strong side mode suppression.
                      The monolithic approach without need for complicated sample
                      processing has tremendous potential for the fabrication of
                      cost effective and portable gas sensing devices.},
      keywords     = {Dissertation (GND)},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)11},
      url          = {https://juser.fz-juelich.de/record/150523},
}