000150537 001__ 150537
000150537 005__ 20210129213214.0
000150537 0247_ $$2doi$$a10.1007/s11051-012-1411-6
000150537 0247_ $$2ISSN$$a1572-896X
000150537 0247_ $$2ISSN$$a1388-0764
000150537 0247_ $$2WOS$$aWOS:000318550000094
000150537 037__ $$aFZJ-2014-00591
000150537 041__ $$aEnglish
000150537 082__ $$a570
000150537 1001_ $$0P:(DE-HGF)0$$aSofer, Zdeněk$$b0$$eCorresponding author
000150537 245__ $$aRapid thermal synthesis of GaN nanocrystals and nanodisks
000150537 260__ $$aDordrecht [u.a.]$$bSpringer Science + Business Media B.V$$c2013
000150537 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1390470854_1596
000150537 3367_ $$2DataCite$$aOutput Types/Journal article
000150537 3367_ $$00$$2EndNote$$aJournal Article
000150537 3367_ $$2BibTeX$$aARTICLE
000150537 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000150537 3367_ $$2DRIVER$$aarticle
000150537 500__ $$3POF3_Assignment on 2016-02-29
000150537 520__ $$aGallium nitride materials are at the forefront of nanoelectronic research due to their importance for UV optoelectronics. In this contribution, we present a facile and well-controlled synthesis of GaN nanodisks by rapid thermal ammonolysis of complex gallium fluoride precursor. We observed the formation of GaN nanodisks in 150 s at 800 °C. The structural properties of GaN were investigated by X-ray diffraction, Raman spectroscopy, and micro-photoluminescence. The morphology of GaN was investigated by scanning electron microscopy and the magnetic properties by superconducting quantum interference device (SQUID) techniques. The morphology of nanodisks was strongly influenced by the temperature of synthesis. The structure characterization shows a high concentration of defects related mainly to the vacancies of N and Ga. The magnetic measurement by SQUID shows paramagnetic behavior induced by structure defects. These findings have a strong implication on the construction of modern optoelectronic nanodevices.
000150537 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000150537 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000150537 7001_ $$0P:(DE-HGF)0$$aSedmidubský, David$$b1
000150537 7001_ $$0P:(DE-HGF)0$$aHuber, Štěpán$$b2
000150537 7001_ $$0P:(DE-HGF)0$$aŠimek, Petr$$b3
000150537 7001_ $$0P:(DE-HGF)0$$aŠaněk, Filip$$b4
000150537 7001_ $$0P:(DE-HGF)0$$aJankovský, Ondřej$$b5
000150537 7001_ $$0P:(DE-HGF)0$$aGregorová, Eva$$b6
000150537 7001_ $$0P:(DE-HGF)0$$aFiala, Roman$$b7
000150537 7001_ $$0P:(DE-HGF)0$$aMatějková, Stanislava$$b8
000150537 7001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b9$$ufzj
000150537 773__ $$0PERI:(DE-600)2017013-0$$a10.1007/s11051-012-1411-6$$gVol. 15, no. 1, p. 1411$$n1$$p1411$$tJournal of nanoparticle research$$v15$$x1572-896X$$y2013
000150537 8564_ $$uhttp://link.springer.com/article/10.1007%2Fs11051-012-1411-6
000150537 8564_ $$uhttps://juser.fz-juelich.de/record/150537/files/FZJ-2014-00591.pdf$$yRestricted$$zPublished final document.
000150537 909CO $$ooai:juser.fz-juelich.de:150537$$pVDB
000150537 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128613$$aForschungszentrum Jülich GmbH$$b9$$kFZJ
000150537 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000150537 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000150537 9141_ $$y2013
000150537 915__ $$0StatID:(DE-HGF)0040$$2StatID$$aPeer review unknown
000150537 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000150537 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000150537 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000150537 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000150537 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000150537 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000150537 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000150537 915__ $$0StatID:(DE-HGF)1040$$2StatID$$aDBCoverage$$bZoological Record
000150537 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000150537 980__ $$ajournal
000150537 980__ $$aVDB
000150537 980__ $$aUNRESTRICTED
000150537 980__ $$aI:(DE-Juel1)PGI-9-20110106