TY  - JOUR
AU  - Sofer, Zdeněk
AU  - Sedmidubský, David
AU  - Huber, Štěpán
AU  - Šimek, Petr
AU  - Šaněk, Filip
AU  - Jankovský, Ondřej
AU  - Gregorová, Eva
AU  - Fiala, Roman
AU  - Matějková, Stanislava
AU  - Mikulics, Martin
TI  - Rapid thermal synthesis of GaN nanocrystals and nanodisks
JO  - Journal of nanoparticle research
VL  - 15
IS  - 1
SN  - 1572-896X
CY  - Dordrecht [u.a.]
PB  - Springer Science + Business Media B.V
M1  - FZJ-2014-00591
SP  - 1411
PY  - 2013
AB  - Gallium nitride materials are at the forefront of nanoelectronic research due to their importance for UV optoelectronics. In this contribution, we present a facile and well-controlled synthesis of GaN nanodisks by rapid thermal ammonolysis of complex gallium fluoride precursor. We observed the formation of GaN nanodisks in 150 s at 800 °C. The structural properties of GaN were investigated by X-ray diffraction, Raman spectroscopy, and micro-photoluminescence. The morphology of GaN was investigated by scanning electron microscopy and the magnetic properties by superconducting quantum interference device (SQUID) techniques. The morphology of nanodisks was strongly influenced by the temperature of synthesis. The structure characterization shows a high concentration of defects related mainly to the vacancies of N and Ga. The magnetic measurement by SQUID shows paramagnetic behavior induced by structure defects. These findings have a strong implication on the construction of modern optoelectronic nanodevices.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000318550000094
DO  - DOI:10.1007/s11051-012-1411-6
UR  - https://juser.fz-juelich.de/record/150537
ER  -