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@ARTICLE{Sofer:150537,
      author       = {Sofer, Zdeněk and Sedmidubský, David and Huber, Štěpán
                      and Šimek, Petr and Šaněk, Filip and Jankovský, Ondřej
                      and Gregorová, Eva and Fiala, Roman and Matějková,
                      Stanislava and Mikulics, Martin},
      title        = {{R}apid thermal synthesis of {G}a{N} nanocrystals and
                      nanodisks},
      journal      = {Journal of nanoparticle research},
      volume       = {15},
      number       = {1},
      issn         = {1572-896X},
      address      = {Dordrecht [u.a.]},
      publisher    = {Springer Science + Business Media B.V},
      reportid     = {FZJ-2014-00591},
      pages        = {1411},
      year         = {2013},
      abstract     = {Gallium nitride materials are at the forefront of
                      nanoelectronic research due to their importance for UV
                      optoelectronics. In this contribution, we present a facile
                      and well-controlled synthesis of GaN nanodisks by rapid
                      thermal ammonolysis of complex gallium fluoride precursor.
                      We observed the formation of GaN nanodisks in 150 s at 800
                      °C. The structural properties of GaN were investigated by
                      X-ray diffraction, Raman spectroscopy, and
                      micro-photoluminescence. The morphology of GaN was
                      investigated by scanning electron microscopy and the
                      magnetic properties by superconducting quantum interference
                      device (SQUID) techniques. The morphology of nanodisks was
                      strongly influenced by the temperature of synthesis. The
                      structure characterization shows a high concentration of
                      defects related mainly to the vacancies of N and Ga. The
                      magnetic measurement by SQUID shows paramagnetic behavior
                      induced by structure defects. These findings have a strong
                      implication on the construction of modern optoelectronic
                      nanodevices.},
      cin          = {PGI-9},
      ddc          = {570},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000318550000094},
      doi          = {10.1007/s11051-012-1411-6},
      url          = {https://juser.fz-juelich.de/record/150537},
}