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@ARTICLE{Novk:150539,
      author       = {Novák, J. and Križanová, Z. and Vávra, I. and Eliáš,
                      P. and Hasenöhrl, S. and Laurenčíková, A. and Novotný,
                      I. and Kováč, J. and Šutta, P. and Mikulics, Martin},
      title        = {{S}tructural and optical properties of individual
                      {G}a{P}/{Z}n{O} core–shell nanowires},
      journal      = {Vacuum},
      volume       = {98},
      issn         = {0042-207X},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier Science},
      reportid     = {FZJ-2014-00593},
      pages        = {106 - 110},
      year         = {2013},
      abstract     = {Structural and optical properties of ZnOeGaP coreeshell
                      nanowires were studied by means of electron microscopy and
                      microphotoluminescence. A thin ZnO shell layer was deposited
                      by RF sputtering on GaP nanowires, which were grown on GaP
                      (111)B substrates under vapoureliquidesolid mode by MOVPE.
                      The SEM and TEM characterization showed that the ZnO shells
                      fully covered the surface of the NWs from top to bottom.
                      Each GaP NW core is composed of many well-defined twinned
                      segments with the planes of twinning oriented in
                      perpendicular to the growth direction. This was contradicted
                      in kinked GaP NWs: their growth direction was initially
                      perpendicular to the twinning planes, but once the NW had
                      kinked, it changed to lie within the twinning planes. The
                      ZnO shell deposited on the GaP core has a columnar
                      morphology. The columns are inclined at a positive angle
                      close to 70 with respect to the GaP growth axis. All
                      observed columns were tilted at this angle to the growth
                      direction. Micro-photoluminescence study showed that thermal
                      annealing improved the quality of the ZnO crystallographic
                      structure; the annealing made observable the
                      photoluminescence peak related to the band-to-band
                      transition in ZnO.},
      cin          = {PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {422 - Spin-based and quantum information (POF2-422)},
      pid          = {G:(DE-HGF)POF2-422},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000322805900020},
      doi          = {10.1016/j.vacuum.2012.12.005},
      url          = {https://juser.fz-juelich.de/record/150539},
}