%0 Journal Article
%A Mackova, A.
%A Malinský, P.
%A Sofer, Z.
%A Šimek, P.
%A Sedmidubský, D.
%A Mikulics, Martin
%A Wilhelm, R. A.
%T A study of the structural properties of GaN implanted by various rare-earth ions
%J Nuclear instruments & methods in physics research / B
%V 307
%@ 0168-583X
%C Amsterdam [u.a.]
%I Elsevier
%M FZJ-2014-00594
%P 446 - 451
%D 2013
%X GaN layers with h0001i crystallographic orientation, grown by low-pressure metal-organic vapourphase
%X epitaxy (MOVPE) on c-plane sapphire substrates, were implanted with 200 and 400 keV Sm+,
%X Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1  1015–1  1016 cm2. The composition of the ion-implanted
%X layers and concentration profiles of the implanted atoms were studied by Rutherford Back-Scattering
%X spectrometry (RBS). The profiles were compared to SRIM 2008 simulations. The structural properties
%X of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy. Changes
%X in the surface morphology caused by the ion implantation were examined by Atomic Force Microscopy
%X (AFM). A structural analysis showed a high disorder of the atoms close to the amorphised structure at
%X the surface layer above an implantation fluence of 5  1015 cm2 while lower disorder density was
%X observed in the bulk according to the projected range of 400 keV ions. The post-implantation annealing
%X induced significant changes only in the Sm and Eu depth profiles; a diffusion of rare-earths implanted at a
%X fluence of 5  1015 cm2 to the surface was observed. The annealing caused the reconstruction of the surface
%X layer accompanied by surface-roughness enhancement.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000321722200099
%R 10.1016/j.nimb.2012.11.079
%U https://juser.fz-juelich.de/record/150540