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000150540 0247_ $$2doi$$a10.1016/j.nimb.2012.11.079
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000150540 1001_ $$0P:(DE-HGF)0$$aMackova, A.$$b0$$eCorresponding author
000150540 245__ $$aA study of the structural properties of GaN implanted by various rare-earth ions
000150540 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2013
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000150540 520__ $$aGaN layers with h0001i crystallographic orientation, grown by low-pressure metal-organic vapourphase
epitaxy (MOVPE) on c-plane sapphire substrates, were implanted with 200 and 400 keV Sm+,
Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1  1015–1  1016 cm2. The composition of the ion-implanted
layers and concentration profiles of the implanted atoms were studied by Rutherford Back-Scattering
spectrometry (RBS). The profiles were compared to SRIM 2008 simulations. The structural properties
of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy. Changes
in the surface morphology caused by the ion implantation were examined by Atomic Force Microscopy
(AFM). A structural analysis showed a high disorder of the atoms close to the amorphised structure at
the surface layer above an implantation fluence of 5  1015 cm2 while lower disorder density was
observed in the bulk according to the projected range of 400 keV ions. The post-implantation annealing
induced significant changes only in the Sm and Eu depth profiles; a diffusion of rare-earths implanted at a
fluence of 5  1015 cm2 to the surface was observed. The annealing caused the reconstruction of the surface
layer accompanied by surface-roughness enhancement.
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000150540 7001_ $$0P:(DE-HGF)0$$aMalinský, P.$$b1
000150540 7001_ $$0P:(DE-HGF)0$$aSofer, Z.$$b2
000150540 7001_ $$0P:(DE-HGF)0$$aŠimek, P.$$b3
000150540 7001_ $$0P:(DE-HGF)0$$aSedmidubský, D.$$b4
000150540 7001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b5$$ufzj
000150540 7001_ $$0P:(DE-HGF)0$$aWilhelm, R. A.$$b6
000150540 773__ $$0PERI:(DE-600)1466524-4$$a10.1016/j.nimb.2012.11.079$$gVol. 307, p. 446 - 451$$p446 - 451$$tNuclear instruments & methods in physics research / B$$v307$$x0168-583X$$y2013
000150540 8564_ $$uhttp://www.sciencedirect.com/science/article/pii/S0168583X13000955
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