TY  - JOUR
AU  - Mackova, A.
AU  - Malinský, P.
AU  - Sofer, Z.
AU  - Šimek, P.
AU  - Sedmidubský, D.
AU  - Mikulics, Martin
AU  - Wilhelm, R. A.
TI  - A study of the structural properties of GaN implanted by various rare-earth ions
JO  - Nuclear instruments & methods in physics research / B
VL  - 307
SN  - 0168-583X
CY  - Amsterdam [u.a.]
PB  - Elsevier
M1  - FZJ-2014-00594
SP  - 446 - 451
PY  - 2013
AB  - GaN layers with h0001i crystallographic orientation, grown by low-pressure metal-organic vapourphase
AB  - epitaxy (MOVPE) on c-plane sapphire substrates, were implanted with 200 and 400 keV Sm+,
AB  - Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1  1015–1  1016 cm2. The composition of the ion-implanted
AB  - layers and concentration profiles of the implanted atoms were studied by Rutherford Back-Scattering
AB  - spectrometry (RBS). The profiles were compared to SRIM 2008 simulations. The structural properties
AB  - of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy. Changes
AB  - in the surface morphology caused by the ion implantation were examined by Atomic Force Microscopy
AB  - (AFM). A structural analysis showed a high disorder of the atoms close to the amorphised structure at
AB  - the surface layer above an implantation fluence of 5  1015 cm2 while lower disorder density was
AB  - observed in the bulk according to the projected range of 400 keV ions. The post-implantation annealing
AB  - induced significant changes only in the Sm and Eu depth profiles; a diffusion of rare-earths implanted at a
AB  - fluence of 5  1015 cm2 to the surface was observed. The annealing caused the reconstruction of the surface
AB  - layer accompanied by surface-roughness enhancement.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000321722200099
DO  - DOI:10.1016/j.nimb.2012.11.079
UR  - https://juser.fz-juelich.de/record/150540
ER  -