% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Mackova:150540,
      author       = {Mackova, A. and Malinský, P. and Sofer, Z. and Šimek, P.
                      and Sedmidubský, D. and Mikulics, Martin and Wilhelm, R.
                      A.},
      title        = {{A} study of the structural properties of {G}a{N} implanted
                      by various rare-earth ions},
      journal      = {Nuclear instruments $\&$ methods in physics research / B},
      volume       = {307},
      issn         = {0168-583X},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2014-00594},
      pages        = {446 - 451},
      year         = {2013},
      abstract     = {GaN layers with h0001i crystallographic orientation, grown
                      by low-pressure metal-organic vapourphase epitaxy (MOVPE) on
                      c-plane sapphire substrates, were implanted with 200 and 400
                      keV Sm+, Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1
                      1015–1 1016 cm2. The composition of the ion-implanted
                      layers and concentration profiles of the implanted atoms
                      were studied by Rutherford Back-Scattering spectrometry
                      (RBS). The profiles were compared to SRIM 2008 simulations.
                      The structural properties of the ion-implanted layers were
                      characterised by RBS-channelling and Raman spectroscopy.
                      Changes in the surface morphology caused by the ion
                      implantation were examined by Atomic Force Microscopy (AFM).
                      A structural analysis showed a high disorder of the atoms
                      close to the amorphised structure at the surface layer above
                      an implantation fluence of 5 1015 cm2 while lower disorder
                      density was observed in the bulk according to the projected
                      range of 400 keV ions. The post-implantation annealing
                      induced significant changes only in the Sm and Eu depth
                      profiles; a diffusion of rare-earths implanted at a fluence
                      of 5 1015 cm2 to the surface was observed. The annealing
                      caused the reconstruction of the surface layer accompanied
                      by surface-roughness enhancement.},
      cin          = {PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {422 - Spin-based and quantum information (POF2-422)},
      pid          = {G:(DE-HGF)POF2-422},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000321722200099},
      doi          = {10.1016/j.nimb.2012.11.079},
      url          = {https://juser.fz-juelich.de/record/150540},
}