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| Hauptseite > Publikationsdatenbank > A study of the structural properties of GaN implanted by various rare-earth ions > print |
| Hauptseite > Publikationsdatenbank > A study of the structural properties of GaN implanted by various rare-earth ions > print |
| 001 | 150540 | ||
| 005 | 20210129213215.0 | ||
| 024 | 7 | _ | |a 10.1016/j.nimb.2012.11.079 |2 doi |
| 024 | 7 | _ | |a 0168-583X |2 ISSN |
| 024 | 7 | _ | |a 1872-9584 |2 ISSN |
| 024 | 7 | _ | |a 0168-583x |2 ISSN |
| 024 | 7 | _ | |a WOS:000321722200099 |2 WOS |
| 037 | _ | _ | |a FZJ-2014-00594 |
| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Mackova, A. |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a A study of the structural properties of GaN implanted by various rare-earth ions |
| 260 | _ | _ | |a Amsterdam [u.a.] |c 2013 |b Elsevier |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1390471135_15158 |2 PUB:(DE-HGF) |
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| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 520 | _ | _ | |a GaN layers with h0001i crystallographic orientation, grown by low-pressure metal-organic vapourphase
epitaxy (MOVPE) on c-plane sapphire substrates, were implanted with 200 and 400 keV Sm+,
Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1 1015–1 1016 cm2. The composition of the ion-implanted
layers and concentration profiles of the implanted atoms were studied by Rutherford Back-Scattering
spectrometry (RBS). The profiles were compared to SRIM 2008 simulations. The structural properties
of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy. Changes
in the surface morphology caused by the ion implantation were examined by Atomic Force Microscopy
(AFM). A structural analysis showed a high disorder of the atoms close to the amorphised structure at
the surface layer above an implantation fluence of 5 1015 cm2 while lower disorder density was
observed in the bulk according to the projected range of 400 keV ions. The post-implantation annealing
induced significant changes only in the Sm and Eu depth profiles; a diffusion of rare-earths implanted at a
fluence of 5 1015 cm2 to the surface was observed. The annealing caused the reconstruction of the surface
layer accompanied by surface-roughness enhancement. |
| 536 | _ | _ | |a 422 - Spin-based and quantum information (POF2-422) |0 G:(DE-HGF)POF2-422 |c POF2-422 |x 0 |f POF II |
| 588 | _ | _ | |a Dataset connected to CrossRef, juser.fz-juelich.de |
| 700 | 1 | _ | |a Malinský, P. |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Sofer, Z. |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Šimek, P. |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Sedmidubský, D. |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Mikulics, Martin |0 P:(DE-Juel1)128613 |b 5 |u fzj |
| 700 | 1 | _ | |a Wilhelm, R. A. |0 P:(DE-HGF)0 |b 6 |
| 773 | _ | _ | |a 10.1016/j.nimb.2012.11.079 |g Vol. 307, p. 446 - 451 |p 446 - 451 |0 PERI:(DE-600)1466524-4 |t Nuclear instruments & methods in physics research / B |v 307 |y 2013 |x 0168-583X |
| 856 | 4 | _ | |u http://www.sciencedirect.com/science/article/pii/S0168583X13000955 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/150540/files/FZJ-2014-00594.pdf |z Published final document. |y Restricted |
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| 914 | 1 | _ | |y 2013 |
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