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000150542 0247_ $$2doi$$a10.1007/s00340-013-5495-1
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000150542 037__ $$aFZJ-2014-00596
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000150542 1001_ $$0P:(DE-HGF)0$$aZhang, Jie$$b0$$eCorresponding author
000150542 245__ $$aGeneration of THz transients by photoexcited single-crystal GaAs meso-structures
000150542 260__ $$aBerlin$$bSpringer$$c2013
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000150542 520__ $$aWe report a sub-picosecond photoresponse and THz transient generation of GaAs single-crystal mesoscopic platelets excited by femtosecond optical pulses. Our structures were fabricated by a top-down technique, by patterning an epitaxial, 500-nm-thick GaAs film grown on top of an AlAs sacrificial layer and then transferring the resulting etched away 10 9 20-lm2 platelets onto an MgO substrate using a micropipette. The freestanding GaAs devices, incorporated into an Au coplanar strip line, exhibited extremely low dark currents and *0.4 % detection efficiency at 10 V bias. The all-optical, pump–probe carrier dynamics analysis showed that, for 800-nmwavelengthexcitation, the intrinsic relaxation of photocarriersfeatured a 310-fs-wide transient with a 290 fs falltime. We have also carried out a femtosecond, timeresolved electro-optic characterization of our devices and recorded along the transmission line the electrical transients as short as *600 fs, when the platelet was excited by a train of 100-fs-wide, 800-nm-wavelength optical laser pulses. The platelets have been also demonstrated to be very efficient generators of free-space propagating THz transients with the spectral bandwidth exceeding 2 THz. The presented performance of the epitaxial, freestanding GaAs meso-structured photodevices makes them uniquely suitable for THz-frequency optoelectronic applications, ranging from ultrafast photodetectors to THz-bandwidth optical-to-electrical transducers and photomixers.
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000150542 7001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b1$$ufzj
000150542 7001_ $$0P:(DE-Juel1)130495$$aAdam, Roman$$b2$$ufzj
000150542 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b3$$ufzj
000150542 7001_ $$0P:(DE-HGF)0$$aSobolewski, Roman$$b4
000150542 773__ $$0PERI:(DE-600)1458437-2$$a10.1007/s00340-013-5495-1$$gVol. 113, no. 3, p. 339 - 344$$n3$$p339 - 344$$tApplied physics / B$$v113$$x1432-0649$$y2013
000150542 8564_ $$uhttp://link.springer.com/article/10.1007%2Fs00340-013-5495-1
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