Hauptseite > Workflowsammlungen > Öffentliche Einträge > Generation of THz transients by photoexcited single-crystal GaAs meso-structures > print

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005     20210129213216.0
024 7 _ |a 10.1007/s00340-013-5495-1
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037 _ _ |a FZJ-2014-00596
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082 _ _ |a 530
100 1 _ |a Zhang, Jie
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245 _ _ |a Generation of THz transients by photoexcited single-crystal GaAs meso-structures
260 _ _ |a Berlin
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520 _ _ |a We report a sub-picosecond photoresponse and THz transient generation of GaAs single-crystal mesoscopic platelets excited by femtosecond optical pulses. Our structures were fabricated by a top-down technique, by patterning an epitaxial, 500-nm-thick GaAs film grown on top of an AlAs sacrificial layer and then transferring the resulting etched away 10 9 20-lm2 platelets onto an MgO substrate using a micropipette. The freestanding GaAs devices, incorporated into an Au coplanar strip line, exhibited extremely low dark currents and *0.4 % detection efficiency at 10 V bias. The all-optical, pump–probe carrier dynamics analysis showed that, for 800-nmwavelengthexcitation, the intrinsic relaxation of photocarriersfeatured a 310-fs-wide transient with a 290 fs falltime. We have also carried out a femtosecond, timeresolved electro-optic characterization of our devices and recorded along the transmission line the electrical transients as short as *600 fs, when the platelet was excited by a train of 100-fs-wide, 800-nm-wavelength optical laser pulses. The platelets have been also demonstrated to be very efficient generators of free-space propagating THz transients with the spectral bandwidth exceeding 2 THz. The presented performance of the epitaxial, freestanding GaAs meso-structured photodevices makes them uniquely suitable for THz-frequency optoelectronic applications, ranging from ultrafast photodetectors to THz-bandwidth optical-to-electrical transducers and photomixers.
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700 1 _ |a Mikulics, Martin
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700 1 _ |a Adam, Roman
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700 1 _ |a Sobolewski, Roman
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773 _ _ |a 10.1007/s00340-013-5495-1
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