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000150543 0247_ $$2doi$$a10.1117/12.2017253
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000150543 037__ $$aFZJ-2014-00597
000150543 041__ $$aEnglish
000150543 1001_ $$0P:(DE-HGF)0$$aAdelung, Rainer$$b0$$eCorresponding author
000150543 1112_ $$aSPIE Microtechnologies$$cGrenoble$$d2014-04-24 - 2014-04-26$$wFrance
000150543 245__ $$aProperties of individual GaP/ZnO core-shell nanowires with radial PN junction
000150543 260__ $$c2013
000150543 29510 $$aProceedings of the SPIE - Nanotechnology VI
000150543 300__ $$a1-6
000150543 3367_ $$0PUB:(DE-HGF)8$$2PUB:(DE-HGF)$$aContribution to a conference proceedings$$bcontrib$$mcontrib$$s1390464297_1596
000150543 3367_ $$0PUB:(DE-HGF)7$$2PUB:(DE-HGF)$$aContribution to a book$$mcontb
000150543 3367_ $$033$$2EndNote$$aConference Paper
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000150543 3367_ $$2BibTeX$$aINPROCEEDINGS
000150543 500__ $$3POF3_Assignment on 2016-02-29
000150543 520__ $$aNanowires (NW) exhibit unique electrical and optical properties due to lowered dimensions and related confinement effects. An integration of these tiny objects necessitates better understanding of their individual intrinsic properties. Precise electrical characterization of NWs requests preparation of electrical nanocontacts with high stability, low contact resistance and ohmic behaviour. We applied a conventional field-effect transistor configuration that allows to estimate a type of conductivity and carrier mobility also. Structural properties of individual NWs were studied by means of SEM and TEM techniques. The GaP nanowires under study were grown on the p-type GaP (111)B substrate by a VLS technique using 30 nm colloidal gold particles as seeds. A part of NWs was covered by a thin ZnO layer (10 - 140 nm) deposited by RF sputtering. Deposition of thin ZnO layer on the GaP nanowire led to creation of radial PN junction in core-shell configuration.
000150543 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
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000150543 7001_ $$0P:(DE-HGF)0$$aEliáš, P.$$b1
000150543 7001_ $$0P:(DE-HGF)0$$aHasenöhrl, S.$$b2
000150543 7001_ $$0P:(DE-HGF)0$$aLaurenciková, A.$$b3
000150543 7001_ $$0P:(DE-HGF)0$$aVávra, I.$$b4
000150543 7001_ $$0P:(DE-HGF)0$$aNovotný, I.$$b5
000150543 7001_ $$0P:(DE-HGF)0$$aKováč, J.$$b6
000150543 7001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b7
000150543 773__ $$a10.1117/12.2017253$$p1-6$$v8766
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000150543 9101_ $$0I:(DE-HGF)0$$6P:(DE-HGF)0$$aExternal Institute$$b4$$kExtern
000150543 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128613$$aForschungszentrum Jülich GmbH$$b7$$kFZJ
000150543 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000150543 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000150543 9141_ $$y2013
000150543 920__ $$lyes
000150543 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
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