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@INPROCEEDINGS{Adelung:150543,
      author       = {Adelung, Rainer and Eliáš, P. and Hasenöhrl, S. and
                      Laurenciková, A. and Vávra, I. and Novotný, I. and
                      Kováč, J. and Mikulics, Martin},
      title        = {{P}roperties of individual {G}a{P}/{Z}n{O} core-shell
                      nanowires with radial {PN} junction},
      volume       = {8766},
      reportid     = {FZJ-2014-00597},
      pages        = {1-6},
      year         = {2013},
      comment      = {Proceedings of the SPIE - Nanotechnology VI},
      booktitle     = {Proceedings of the SPIE -
                       Nanotechnology VI},
      abstract     = {Nanowires (NW) exhibit unique electrical and optical
                      properties due to lowered dimensions and related confinement
                      effects. An integration of these tiny objects necessitates
                      better understanding of their individual intrinsic
                      properties. Precise electrical characterization of NWs
                      requests preparation of electrical nanocontacts with high
                      stability, low contact resistance and ohmic behaviour. We
                      applied a conventional field-effect transistor configuration
                      that allows to estimate a type of conductivity and carrier
                      mobility also. Structural properties of individual NWs were
                      studied by means of SEM and TEM techniques. The GaP
                      nanowires under study were grown on the p-type GaP (111)B
                      substrate by a VLS technique using 30 nm colloidal gold
                      particles as seeds. A part of NWs was covered by a thin ZnO
                      layer (10 - 140 nm) deposited by RF sputtering. Deposition
                      of thin ZnO layer on the GaP nanowire led to creation of
                      radial PN junction in core-shell configuration.},
      month         = {Apr},
      date          = {2014-04-24},
      organization  = {SPIE Microtechnologies, Grenoble
                       (France), 24 Apr 2014 - 26 Apr 2014},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      UT           = {WOS:000323346100003},
      doi          = {10.1117/12.2017253},
      url          = {https://juser.fz-juelich.de/record/150543},
}