TY  - CONF
AU  - Haab, Anna
AU  - Mikulics, Martin
AU  - Stoica, Toma
AU  - Kardynal, Beata
AU  - Winden, Andreas
AU  - Hardtdegen, Hilde
AU  - Grützmacher, Detlev
AU  - Jin, Jiehong
AU  - Mussler, Gregor
TI  - Innovative fabrication of columnar InxGa1-xN/GaN nanostructures for photovoltaic applications
M1  - FZJ-2014-00603
SN  - 978-3-89336-870-9
SP  - 231 - 234
PY  - 2013
AB  - Group III-nitride nanostructures for future generation, high efficient energy device applications were fabricated
AB  - by capping nanostructured GaN templates with InxGa1-xN grown by metal-organic vapour phase epitaxy
AB  - (MOVPE) in a concentration range of x between 0 and 1. The nanostructure GaN templates exhibit a high
AB  - crystallinity and excellent optical properties before overgrowth. After overgrowth a large band gap variation in
AB  - the solar spectrum could be achieved. The indium concentration in the ternary InxGa1-xN alloy was controllable
AB  - between x = 0 to 1. The investigations demonstrate that the nanostructures are promising for photovoltaic
AB  - applications.
T2  - 15th European Workshop on Metalorganic Vapour Phase Epitaxie
CY  - 2 Jun 2013 - 5 Jun 2013, Aachen (Germany)
Y2  - 2 Jun 2013 - 5 Jun 2013
M2  - Aachen, Germany
LB  - PUB:(DE-HGF)8
UR  - https://juser.fz-juelich.de/record/150549
ER  -