Contribution to a conference proceedings

FZJ-2014-00605

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Chemical vapour deposition of chalcogenide phase change materials using digermane

Rieß, S. (Corresponding author)FZJ* ; Schlösser, D.FZJ* ; Wiemann, C.FZJ* ; Hauer, B. ; Taubner, T. ; Stoica, T.FZJ* ; Grützmacher, D.FZJ* ; Hardtdegen, H.FZJ*

2013

ISBN: 978-3-89336-870-9

Abstract: The use of digermane (Ge2H6) as a Ge-source was investigated for the low temperature metal organic chemical vapour deposition (MOCVD) of GexSbyTez (GST) films. Strong influence of the reactor pressure and growth temperature on the film morphology was observed by SEM and AFM imaging. The incorporation of Ge into the GST crystalline structure was proven using Raman scattering and XPS measurements.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Elektronische Eigenschaften (PGI-6)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2013

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