%0 Conference Paper
%A Rieß, Sally
%A Schlösser, Daniela
%A Wiemann, Carsten
%A Hauer, Benedikt
%A Taubner, Thomas
%A Stoica, Toma
%A Grützmacher, Detlev
%A Hardtdegen, Hilde
%T Chemical vapour deposition of chalcogenide phase change materials using digermane
%M FZJ-2014-00606
%D 2013
%X The use of digermane (Ge2H6) as a Ge-source was investigated for the low temperature metal organic chemical
%X vapour deposition (MOCVD) of GexSbyTez (GST) films. Strong influence of the reactor pressure and growth
%X temperature on the film morphology was observed by SEM and AFM imaging. The incorporation of Ge into
%X the GST crystalline structure was proven using Raman scattering and XPS measurements.
%B 15th European Workshop on Metalorganic Vapour Phase Epitaxie
%C 2 Jun 2013 - 5 Jun 2013, Aachen (Germany)
Y2 2 Jun 2013 - 5 Jun 2013
M2 Aachen, Germany
%F PUB:(DE-HGF)24
%9 Poster
%U https://juser.fz-juelich.de/record/150552