000150552 001__ 150552
000150552 005__ 20210129213218.0
000150552 037__ $$aFZJ-2014-00606
000150552 041__ $$aEnglish
000150552 1001_ $$0P:(DE-Juel1)145686$$aRieß, Sally$$b0$$eCorresponding author$$ufzj
000150552 1112_ $$a15th European Workshop on Metalorganic Vapour Phase Epitaxie$$cAachen$$d2013-06-02 - 2013-06-05$$gEWMOVPE XV$$wGermany
000150552 245__ $$aChemical vapour deposition of chalcogenide phase change materials using digermane
000150552 260__ $$c2013
000150552 3367_ $$0PUB:(DE-HGF)24$$2PUB:(DE-HGF)$$aPoster$$bposter$$mposter$$s1390464932_10361$$xOther
000150552 3367_ $$033$$2EndNote$$aConference Paper
000150552 3367_ $$2DataCite$$aOutput Types/Conference Poster
000150552 3367_ $$2DRIVER$$aconferenceObject
000150552 3367_ $$2ORCID$$aCONFERENCE_POSTER
000150552 3367_ $$2BibTeX$$aINPROCEEDINGS
000150552 520__ $$aThe use of digermane (Ge2H6) as a Ge-source was investigated for the low temperature metal organic chemical
vapour deposition (MOCVD) of GexSbyTez (GST) films. Strong influence of the reactor pressure and growth
temperature on the film morphology was observed by SEM and AFM imaging. The incorporation of Ge into
the GST crystalline structure was proven using Raman scattering and XPS measurements.
000150552 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000150552 7001_ $$0P:(DE-HGF)0$$aSchlösser, Daniela$$b1
000150552 7001_ $$0P:(DE-Juel1)131035$$aWiemann, Carsten$$b2$$ufzj
000150552 7001_ $$0P:(DE-HGF)0$$aHauer, Benedikt$$b3
000150552 7001_ $$0P:(DE-HGF)0$$aTaubner, Thomas$$b4
000150552 7001_ $$0P:(DE-Juel1)128637$$aStoica, Toma$$b5$$ufzj
000150552 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b6$$ufzj
000150552 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b7$$ufzj
000150552 909CO $$ooai:juser.fz-juelich.de:150552$$pVDB
000150552 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)145686$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000150552 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-HGF)0$$aForschungszentrum Jülich GmbH$$b1$$kFZJ
000150552 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)131035$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000150552 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128637$$aForschungszentrum Jülich GmbH$$b5$$kFZJ
000150552 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich GmbH$$b6$$kFZJ
000150552 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125593$$aForschungszentrum Jülich GmbH$$b7$$kFZJ
000150552 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000150552 9141_ $$y2013
000150552 920__ $$lyes
000150552 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000150552 9201_ $$0I:(DE-Juel1)PGI-6-20110106$$kPGI-6$$lElektronische Eigenschaften$$x1
000150552 980__ $$aposter
000150552 980__ $$aVDB
000150552 980__ $$aUNRESTRICTED
000150552 980__ $$aI:(DE-Juel1)PGI-9-20110106
000150552 980__ $$aI:(DE-Juel1)PGI-6-20110106
000150552 981__ $$aI:(DE-Juel1)PGI-6-20110106