TY  - CONF
AU  - Rieß, Sally
AU  - Schlösser, Daniela
AU  - Wiemann, Carsten
AU  - Hauer, Benedikt
AU  - Taubner, Thomas
AU  - Stoica, Toma
AU  - Grützmacher, Detlev
AU  - Hardtdegen, Hilde
TI  - Chemical vapour deposition of chalcogenide phase change materials using digermane
M1  - FZJ-2014-00606
PY  - 2013
AB  - The use of digermane (Ge2H6) as a Ge-source was investigated for the low temperature metal organic chemical
AB  - vapour deposition (MOCVD) of GexSbyTez (GST) films. Strong influence of the reactor pressure and growth
AB  - temperature on the film morphology was observed by SEM and AFM imaging. The incorporation of Ge into
AB  - the GST crystalline structure was proven using Raman scattering and XPS measurements.
T2  - 15th European Workshop on Metalorganic Vapour Phase Epitaxie
CY  - 2 Jun 2013 - 5 Jun 2013, Aachen (Germany)
Y2  - 2 Jun 2013 - 5 Jun 2013
M2  - Aachen, Germany
LB  - PUB:(DE-HGF)24
UR  - https://juser.fz-juelich.de/record/150552
ER  -