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@INPROCEEDINGS{Rie:150552,
      author       = {Rieß, Sally and Schlösser, Daniela and Wiemann, Carsten
                      and Hauer, Benedikt and Taubner, Thomas and Stoica, Toma and
                      Grützmacher, Detlev and Hardtdegen, Hilde},
      title        = {{C}hemical vapour deposition of chalcogenide phase change
                      materials using digermane},
      reportid     = {FZJ-2014-00606},
      year         = {2013},
      abstract     = {The use of digermane (Ge2H6) as a Ge-source was
                      investigated for the low temperature metal organic chemical
                      vapour deposition (MOCVD) of GexSbyTez (GST) films. Strong
                      influence of the reactor pressure and growth temperature on
                      the film morphology was observed by SEM and AFM imaging. The
                      incorporation of Ge into the GST crystalline structure was
                      proven using Raman scattering and XPS measurements.},
      month         = {Jun},
      date          = {2013-06-02},
      organization  = {15th European Workshop on Metalorganic
                       Vapour Phase Epitaxie, Aachen
                       (Germany), 2 Jun 2013 - 5 Jun 2013},
      subtyp        = {Other},
      cin          = {PGI-9 / PGI-6},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-6-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)24},
      url          = {https://juser.fz-juelich.de/record/150552},
}