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| 001 | 150552 | ||
| 005 | 20210129213218.0 | ||
| 037 | _ | _ | |a FZJ-2014-00606 |
| 041 | _ | _ | |a English |
| 100 | 1 | _ | |a Rieß, Sally |0 P:(DE-Juel1)145686 |b 0 |u fzj |e Corresponding author |
| 111 | 2 | _ | |a 15th European Workshop on Metalorganic Vapour Phase Epitaxie |w Germany |c Aachen |d 2013-06-02 - 2013-06-05 |g EWMOVPE XV |
| 245 | _ | _ | |a Chemical vapour deposition of chalcogenide phase change materials using digermane |
| 260 | _ | _ | |c 2013 |
| 336 | 7 | _ | |a Poster |b poster |m poster |0 PUB:(DE-HGF)24 |s 1390464932_10361 |2 PUB:(DE-HGF) |x Other |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a Output Types/Conference Poster |2 DataCite |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a CONFERENCE_POSTER |2 ORCID |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
| 520 | _ | _ | |a The use of digermane (Ge2H6) as a Ge-source was investigated for the low temperature metal organic chemical
vapour deposition (MOCVD) of GexSbyTez (GST) films. Strong influence of the reactor pressure and growth
temperature on the film morphology was observed by SEM and AFM imaging. The incorporation of Ge into
the GST crystalline structure was proven using Raman scattering and XPS measurements. |
| 536 | _ | _ | |a 421 - Frontiers of charge based Electronics (POF2-421) |0 G:(DE-HGF)POF2-421 |c POF2-421 |x 0 |f POF II |
| 700 | 1 | _ | |a Schlösser, Daniela |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Wiemann, Carsten |0 P:(DE-Juel1)131035 |b 2 |u fzj |
| 700 | 1 | _ | |a Hauer, Benedikt |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Taubner, Thomas |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Stoica, Toma |0 P:(DE-Juel1)128637 |b 5 |u fzj |
| 700 | 1 | _ | |a Grützmacher, Detlev |0 P:(DE-Juel1)125588 |b 6 |u fzj |
| 700 | 1 | _ | |a Hardtdegen, Hilde |0 P:(DE-Juel1)125593 |b 7 |u fzj |
| 909 | C | O | |o oai:juser.fz-juelich.de:150552 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)145686 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-HGF)0 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)131035 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 5 |6 P:(DE-Juel1)128637 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 6 |6 P:(DE-Juel1)125588 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 7 |6 P:(DE-Juel1)125593 |
| 913 | 1 | _ | |a DE-HGF |b Schlüsseltechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-421 |2 G:(DE-HGF)POF2-400 |v Frontiers of charge based Electronics |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |l Grundlagen zukünftiger Informationstechnologien |
| 914 | 1 | _ | |y 2013 |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-6-20110106 |k PGI-6 |l Elektronische Eigenschaften |x 1 |
| 980 | _ | _ | |a poster |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-6-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-6-20110106 |
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