Home > Publications database > Growth and characteristics of lateral InAs nanowires on Si substrates
 
Conference Presentation (Other) FZJ-2014-00607
http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png
Growth and characteristics of lateral InAs nanowires on Si substrates

 ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;

2013

International Conference on One-Dimensional Nanomaterials, ICON, AnnecyAnnecy, France, 23 Sep 2013 - 26 Sep 20132013-09-232013-09-26

Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
  2. PGI-8-PT (PGI-8-PT)
  3. Mikrostrukturforschung (PGI-5)
Research Program(s):
  1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2013
Click to display QR Code for this record

The record appears in these collections:
Document types > Presentations > Conference Presentations
Institute Collections > ER-C > ER-C-1
Institute Collections > PGI > PGI-8-PT
Institute Collections > PGI > PGI-5
Institute Collections > PGI > PGI-9
Workflow collections > Public records
Publications database
 Record created 2014-01-21, last modified 2024-06-10
Similar records



Rate this document:

Rate this document:
1
2
3
4
5
 
(Not yet reviewed)
JuSER :: Search :: Submit :: Personalize :: Help
Powered by Invenio v1.1.7 | join2_v2508a
Maintained by juser@fz-juelich.de

Impressum | Data Privacy Policy
This site is also available in the following languages:
Deutsch  English