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000150572 037__ $$aFZJ-2014-00621
000150572 041__ $$aEnglish
000150572 1001_ $$0P:(DE-Juel1)145686$$aRieß, Sally$$b0$$eCorresponding author
000150572 1112_ $$aDPG Frühjahrstagung$$cRegensburg$$d2013-03-10 - 2013-03-15$$gDPG$$wGermany
000150572 245__ $$aMetal organic chemical vapor deposition of GexSbyTez layers grown by using digermane
000150572 260__ $$c2013
000150572 3367_ $$0PUB:(DE-HGF)24$$2PUB:(DE-HGF)$$aPoster$$bposter$$mposter$$s1390465634_4175$$xOther
000150572 3367_ $$033$$2EndNote$$aConference Paper
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000150572 520__ $$aGexSbyTez (GST) films grown on Si(111) substrates by epitaxy tend to be polycrystalline and therefore rough. Especially the incorporation of Germanium in the films is problematic. Thin and smooth film surfaces are however a prerequisite for memory applications. In the past we demonstrated that the metal organic chemical vapor deposition (MOCVD) growth of highly mismatched III/V materials such as InAs/GaAs can be accomplished conformally, if a low temperature growth process is used. This knowledge is transferred to MOCVD growth of GST. To this end as a Ge precursor digermane was employed which is expected to decompose at low temperatures. Commercial sources for Sb (triethylanthimony) and Te (diethyltellur) were chosen, which are suitable for low temperature deposition. At first the growth of Sb2Te3 layers was optimized. Than digermane was added to the growth process. Growth was evaluated by SEM, XRD and Raman measurements. It was found that GST can be deposited at the same conditions as Sb2Te3. SEM pictures show well coalesced, trigonal crystalline structures and XRD measurements verify the integration of Ge. The influence of growth parameters on layer growth will be presented.
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000150572 7001_ $$0P:(DE-HGF)0$$aSchlösser, Daniela$$b1
000150572 7001_ $$0P:(DE-Juel1)162283$$aLübben, Michael$$b2
000150572 7001_ $$0P:(DE-Juel1)128637$$aStoica, Toma$$b3
000150572 7001_ $$0P:(DE-Juel1)131035$$aWiemann, Carsten$$b4
000150572 7001_ $$0P:(DE-Juel1)128650$$avon der Ahe, Martina$$b5
000150572 7001_ $$0P:(DE-HGF)0$$aSladek, Kamil$$b6
000150572 7001_ $$0P:(DE-Juel1)141986$$aHaab, Anna$$b7
000150572 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b8
000150572 8564_ $$uhttp://www.dpg-verhandlungen.de/year/2013/conference/regensburg/part/hl/session/92/contribution/20
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000150572 9141_ $$y2013
000150572 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000150572 9201_ $$0I:(DE-Juel1)PGI-6-20110106$$kPGI-6$$lElektronische Eigenschaften$$x1
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