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@INPROCEEDINGS{Rie:150572,
      author       = {Rieß, Sally and Schlösser, Daniela and Lübben, Michael
                      and Stoica, Toma and Wiemann, Carsten and von der Ahe,
                      Martina and Sladek, Kamil and Haab, Anna and Hardtdegen,
                      Hilde},
      title        = {{M}etal organic chemical vapor deposition of
                      {G}ex{S}by{T}ez layers grown by using digermane},
      reportid     = {FZJ-2014-00621},
      year         = {2013},
      abstract     = {GexSbyTez (GST) films grown on Si(111) substrates by
                      epitaxy tend to be polycrystalline and therefore rough.
                      Especially the incorporation of Germanium in the films is
                      problematic. Thin and smooth film surfaces are however a
                      prerequisite for memory applications. In the past we
                      demonstrated that the metal organic chemical vapor
                      deposition (MOCVD) growth of highly mismatched III/V
                      materials such as InAs/GaAs can be accomplished conformally,
                      if a low temperature growth process is used. This knowledge
                      is transferred to MOCVD growth of GST. To this end as a Ge
                      precursor digermane was employed which is expected to
                      decompose at low temperatures. Commercial sources for Sb
                      (triethylanthimony) and Te (diethyltellur) were chosen,
                      which are suitable for low temperature deposition. At first
                      the growth of Sb2Te3 layers was optimized. Than digermane
                      was added to the growth process. Growth was evaluated by
                      SEM, XRD and Raman measurements. It was found that GST can
                      be deposited at the same conditions as Sb2Te3. SEM pictures
                      show well coalesced, trigonal crystalline structures and XRD
                      measurements verify the integration of Ge. The influence of
                      growth parameters on layer growth will be presented.},
      month         = {Mar},
      date          = {2013-03-10},
      organization  = {DPG Frühjahrstagung, Regensburg
                       (Germany), 10 Mar 2013 - 15 Mar 2013},
      subtyp        = {Other},
      cin          = {PGI-9 / PGI-6},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-6-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)24},
      url          = {https://juser.fz-juelich.de/record/150572},
}