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@ARTICLE{Poghossian:150600,
      author       = {Poghossian, A. and Cherstvy, A. G. and Schöning, M. J.},
      title        = {{E}lectrical monitoring of polyelectrolyte multilayer
                      formation by means of capacitive field-effect devices.},
      journal      = {Analytical and bioanalytical chemistry},
      volume       = {405},
      number       = {20},
      issn         = {1618-2650},
      address      = {Berlin},
      publisher    = {Springer},
      reportid     = {FZJ-2014-00649},
      pages        = {6425 - 6436},
      year         = {2013},
      abstract     = {The semiconductor field-effect platform represents a
                      powerful tool for detecting the adsorption and binding of
                      charged macromolecules with direct electrical readout. In
                      this work, a capacitive
                      electrolyte–insulator–semiconductor (EIS) field-effect
                      sensor consisting of an Al-p-Si-SiO2 structure has been
                      applied for real-time in situ electrical monitoring of the
                      layer-by-layer formation of polyelectrolyte (PE) multilayers
                      (PEM). The PEMs were deposited directly onto the SiO2
                      surface without any precursor layer or drying procedures.
                      Anionic poly(sodium 4-styrene sulfonate) and cationic weak
                      polyelectrolyte poly(allylamine hydrochloride) have been
                      chosen as a model system. The effect of the ionic strength
                      of the solution, polyelectrolyte concentration, number and
                      polarity of the PE layers on the characteristics of the
                      PEM-modified EIS sensors have been studied by means of
                      capacitance–voltage and constant-capacitance methods. In
                      addition, the thickness, surface morphology, roughness and
                      wettabilityof the PE mono- and multilayers have been
                      characterised by ellipsometry, atomic force microscopy and
                      water contact-angle methods, respectively. To explain
                      potential oscillations on the gate surface and signal
                      behaviour of the capacitive field-effect EIS sensor modified
                      with a PEM, a simplified electrostatic model that takes into
                      account the reduced electrostatic screening of PE charges by
                      mobile ions within the PEM has been proposed and discussed.},
      cin          = {PGI-8 / JARA-FIT / ICS-8},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-8-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)ICS-8-20110106},
      pnm          = {423 - Sensorics and bioinspired systems (POF2-423) / 453 -
                      Physics of the Cell (POF2-453)},
      pid          = {G:(DE-HGF)POF2-423 / G:(DE-HGF)POF2-453},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000321911800005},
      doi          = {10.1007/s00216-013-6951-9},
      url          = {https://juser.fz-juelich.de/record/150600},
}