TY  - JOUR
AU  - Tappertzhofen, S.
AU  - Linn, E.
AU  - Böttger, U.
AU  - Waser, R.
AU  - Valov, Ilia
TI  - Nanobattery effect in RRAMs-implications on device stability and endurance
JO  - IEEE electron device letters
VL  - 35
SN  - 1558-0563
CY  - New York, NY
PB  - IEEE
M1  - FZJ-2014-00993
SP  - 208
PY  - 2013
LB  - PUB:(DE-HGF)16
UR  - https://juser.fz-juelich.de/record/150960
ER  -