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@ARTICLE{Tappertzhofen:150960,
      author       = {Tappertzhofen, S. and Linn, E. and Böttger, U. and Waser,
                      R. and Valov, Ilia},
      title        = {{N}anobattery effect in {RRAM}s-implications on device
                      stability and endurance},
      journal      = {IEEE electron device letters},
      volume       = {35},
      issn         = {1558-0563},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2014-00993},
      pages        = {208},
      year         = {2013},
      cin          = {PGI-7},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {424 - Exploratory materials and phenomena (POF2-424)},
      pid          = {G:(DE-HGF)POF2-424},
      typ          = {PUB:(DE-HGF)16},
      url          = {https://juser.fz-juelich.de/record/150960},
}