%0 Journal Article
%A Tashman, J. W.
%A Lee, J. H.
%A Paik, H.
%A Moyer, J. A.
%A Misra, R.
%A Mundy, J. A.
%A Spila, T.
%A Merz, T. A.
%A Schubert, J.
%A Muller, D. A.
%A Schiffer, P.
%A Schlom, D. G.
%T Epitaxial growth of VO2 by periodic annealing
%J Applied physics letters
%V 104
%N 6
%@ 1077-3118
%C Melville, NY
%I American Institute of Physics
%M FZJ-2014-01286
%P 063104 -
%D 2014
%Z VC 2014 AIP Publishing LLC
%X We report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactivemolecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadiumand its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significantmetal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance changeDR/R of 25 was measured. Low angle annular dark field scanning transmission electronmicroscopy was used in conjunction with electron energy loss spectroscopy to study thefilm/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusionto be limited to 1.6 nm.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000331803800070
%R 10.1063/1.4864404
%U https://juser.fz-juelich.de/record/151307