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000151307 1001_ $$0P:(DE-HGF)0$$aTashman, J. W.$$b0$$eCorresponding author
000151307 245__ $$aEpitaxial growth of VO2 by periodic annealing
000151307 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2014
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000151307 520__ $$aWe report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactivemolecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadiumand its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significantmetal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance changeDR/R of 25 was measured. Low angle annular dark field scanning transmission electronmicroscopy was used in conjunction with electron energy loss spectroscopy to study thefilm/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusionto be limited to 1.6 nm.
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000151307 7001_ $$0P:(DE-HGF)0$$aLee, J. H.$$b1
000151307 7001_ $$0P:(DE-HGF)0$$aPaik, H.$$b2
000151307 7001_ $$0P:(DE-HGF)0$$aMoyer, J. A.$$b3
000151307 7001_ $$0P:(DE-HGF)0$$aMisra, R.$$b4
000151307 7001_ $$0P:(DE-HGF)0$$aMundy, J. A.$$b5
000151307 7001_ $$0P:(DE-HGF)0$$aSpila, T.$$b6
000151307 7001_ $$0P:(DE-HGF)0$$aMerz, T. A.$$b7
000151307 7001_ $$0P:(DE-Juel1)128631$$aSchubert, J.$$b8$$ufzj
000151307 7001_ $$0P:(DE-HGF)0$$aMuller, D. A.$$b9
000151307 7001_ $$0P:(DE-HGF)0$$aSchiffer, P.$$b10
000151307 7001_ $$0P:(DE-HGF)0$$aSchlom, D. G.$$b11
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