TY  - JOUR
AU  - Tashman, J. W.
AU  - Lee, J. H.
AU  - Paik, H.
AU  - Moyer, J. A.
AU  - Misra, R.
AU  - Mundy, J. A.
AU  - Spila, T.
AU  - Merz, T. A.
AU  - Schubert, J.
AU  - Muller, D. A.
AU  - Schiffer, P.
AU  - Schlom, D. G.
TI  - Epitaxial growth of VO2 by periodic annealing
JO  - Applied physics letters
VL  - 104
IS  - 6
SN  - 1077-3118
CY  - Melville, NY
PB  - American Institute of Physics
M1  - FZJ-2014-01286
SP  - 063104 -
PY  - 2014
N1  - VC 2014 AIP Publishing LLC
AB  - We report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactivemolecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadiumand its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significantmetal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance changeDR/R of 25 was measured. Low angle annular dark field scanning transmission electronmicroscopy was used in conjunction with electron energy loss spectroscopy to study thefilm/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusionto be limited to 1.6 nm.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000331803800070
DO  - DOI:10.1063/1.4864404
UR  - https://juser.fz-juelich.de/record/151307
ER  -