% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Tashman:151307,
      author       = {Tashman, J. W. and Lee, J. H. and Paik, H. and Moyer, J. A.
                      and Misra, R. and Mundy, J. A. and Spila, T. and Merz, T. A.
                      and Schubert, J. and Muller, D. A. and Schiffer, P. and
                      Schlom, D. G.},
      title        = {{E}pitaxial growth of {VO}2 by periodic annealing},
      journal      = {Applied physics letters},
      volume       = {104},
      number       = {6},
      issn         = {1077-3118},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {FZJ-2014-01286},
      pages        = {063104 -},
      year         = {2014},
      note         = {VC 2014 AIP Publishing LLC},
      abstract     = {We report the growth of ultrathin VO2 films on rutile TiO2
                      (001) substrates via reactivemolecular-beam epitaxy. The
                      films were formed by the cyclical deposition of amorphous
                      vanadiumand its subsequent oxidation and transformation to
                      VO2 via solid-phase epitaxy. Significantmetal-insulator
                      transitions were observed in films as thin as 2.3 nm, where
                      a resistance changeDR/R of 25 was measured. Low angle
                      annular dark field scanning transmission electronmicroscopy
                      was used in conjunction with electron energy loss
                      spectroscopy to study thefilm/substrate interface and
                      revealed the vanadium to be tetravalent and the titanium
                      interdiffusionto be limited to 1.6 nm.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000331803800070},
      doi          = {10.1063/1.4864404},
      url          = {https://juser.fz-juelich.de/record/151307},
}