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100 | 1 | _ | |a Tashman, J. W. |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
245 | _ | _ | |a Epitaxial growth of VO2 by periodic annealing |
260 | _ | _ | |a Melville, NY |c 2014 |b American Institute of Physics |
336 | 7 | _ | |a article |2 DRIVER |
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336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1392369630_28197 |2 PUB:(DE-HGF) |
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500 | _ | _ | |a VC 2014 AIP Publishing LLC |
520 | _ | _ | |a We report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactivemolecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadiumand its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significantmetal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance changeDR/R of 25 was measured. Low angle annular dark field scanning transmission electronmicroscopy was used in conjunction with electron energy loss spectroscopy to study thefilm/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusionto be limited to 1.6 nm. |
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700 | 1 | _ | |a Spila, T. |0 P:(DE-HGF)0 |b 6 |
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773 | _ | _ | |a 10.1063/1.4864404 |g Vol. 104, no. 6, p. 063104 - |0 PERI:(DE-600)1469436-0 |n 6 |p 063104 - |t Applied physics letters |v 104 |y 2014 |x 1077-3118 |
856 | 4 | _ | |u https://juser.fz-juelich.de/record/151307/files/FZJ-2014-01286.pdf |y OpenAccess |
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