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@ARTICLE{Tessarek:151447,
      author       = {Tessarek, C. and Heilmann, M. and Butzen, E. and Haab, A.
                      and Hardtdegen, H. and Dieker, C. and Spiecker, E. and
                      Christiansen, S.},
      title        = {{T}he {R}ole of {S}i during the {G}rowth of {G}a{N}
                      {M}icro- and {N}anorods},
      journal      = {Crystal growth $\&$ design},
      volume       = {14},
      number       = {3},
      issn         = {1528-7505},
      address      = {Washington, DC},
      publisher    = {ACS Publ.},
      reportid     = {FZJ-2014-01393},
      pages        = {1486–1492},
      year         = {2014},
      abstract     = {The role of Si during the metal−organic vapor phase
                      epitaxy of GaN rods is investigated. Already a small amount
                      of Si strongly enhances the vertical growth of GaN. Reactive
                      ion etching experiments show that the inner volume of the
                      rod is much more strongly etched than the m-plane surface
                      layer. Transmission electron microscopy and energy
                      dispersive X-ray spectroscopy measurements reveal that Si is
                      predominiantly incorporated in the surface layer of the
                      m-plane sidewall facets of the rods. The formation of a SiN
                      layer prevents growth on and etching of the m-planes and
                      enhances the mobility of atoms promoting vertical growth.
                      Annealing experiments demonstrate the extraordinary thermal
                      resistivity in comparison to undoped GaN rod structures and
                      GaN layers. The subsequent InGaN quantum well growth on the
                      GaN rods reveals the antisurfactant effect of the SiN layer.
                      A model based on the vapor−liquid−solid growth mode is
                      proposed. The results help to understand the role of Si
                      during growth of GaN rod structures to improve the
                      performance of rod based light emitting and electronic
                      devices.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000332684400069},
      doi          = {10.1021/cg500054w},
      url          = {https://juser.fz-juelich.de/record/151447},
}