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| 001 | 151565 | ||
| 005 | 20210129213516.0 | ||
| 024 | 7 | _ | |a 10.1088/0957-4484/25/13/135203 |2 doi |
| 024 | 7 | _ | |a 1361-6528 |2 ISSN |
| 024 | 7 | _ | |a 0957-4484 |2 ISSN |
| 024 | 7 | _ | |a WOS:000332858700004 |2 WOS |
| 037 | _ | _ | |a FZJ-2014-01458 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Weis, Karl |0 P:(DE-Juel1)128645 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Quantum dots in InAs nanowires induced by surface potential fluctuations |
| 260 | _ | _ | |a Bristol |c 2014 |b IOP Publ. |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1394438778_19322 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 520 | _ | _ | |a Back-gated InAs nanowire field-effect transistors are studied focusing on the formation of intrinsic quantum dots, i.e. dots not intentionally defined by electrodes. Such dots have been studied before, but the suggested explanations for their origin leave some open questions, which are addressed here. Stability diagrams of samples with different doping levels are recorded at electron temperatures below 200 mK, allowing us to estimate the number and size of the dots as well as the type of connection, i.e. in series or in parallel. We discuss several potential physical origins of the dots and conclude that they are most probably induced by potential fluctuations at the nanowire surface. Additionally, we show that via gate voltage and doping, the samples can be tuned to different regimes of Coulomb blockade. |
| 536 | _ | _ | |a 421 - Frontiers of charge based Electronics (POF2-421) |0 G:(DE-HGF)POF2-421 |c POF2-421 |x 0 |f POF II |
| 588 | _ | _ | |a Dataset connected to CrossRef, juser.fz-juelich.de |
| 700 | 1 | _ | |a Wirths, Stephan |0 P:(DE-Juel1)138778 |b 1 |
| 700 | 1 | _ | |a Winden, Andreas |0 P:(DE-Juel1)144014 |b 2 |
| 700 | 1 | _ | |a Sladek, Kamil |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Hardtdegen, Hilde |0 P:(DE-Juel1)125593 |b 4 |
| 700 | 1 | _ | |a Lüth, Hans |0 P:(DE-Juel1)128608 |b 5 |
| 700 | 1 | _ | |a Grützmacher, Detlev |0 P:(DE-Juel1)125588 |b 6 |
| 700 | 1 | _ | |a Schäpers, Thomas |0 P:(DE-Juel1)128634 |b 7 |
| 773 | _ | _ | |a 10.1088/0957-4484/25/13/135203 |g Vol. 25, no. 13, p. 135203 - |p 135203 |n 13 |0 PERI:(DE-600)1362365-5 |t Nanotechnology |v 25 |y 2014 |x 1361-6528 |
| 856 | 4 | _ | |u http://stacks.iop.org/0957-4484/25/135203 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/151565/files/FZJ-2014-01458.pdf |z Published final document. |y Restricted |
| 909 | C | O | |o oai:juser.fz-juelich.de:151565 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)128645 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)138778 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)144014 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 4 |6 P:(DE-Juel1)125593 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 5 |6 P:(DE-Juel1)128608 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 6 |6 P:(DE-Juel1)125588 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 7 |6 P:(DE-Juel1)128634 |
| 913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-529H |2 G:(DE-HGF)POF3-500 |v Addenda |x 0 |
| 913 | 1 | _ | |a DE-HGF |b Schlüsseltechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-421 |2 G:(DE-HGF)POF2-400 |v Frontiers of charge based Electronics |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |l Grundlagen zukünftiger Informationstechnologien |
| 914 | 1 | _ | |y 2014 |
| 915 | _ | _ | |a JCR/ISI refereed |0 StatID:(DE-HGF)0010 |2 StatID |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0110 |2 StatID |b Science Citation Index |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Thomson Reuters Master Journal List |
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| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0300 |2 StatID |b Medline |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0310 |2 StatID |b NCBI Molecular Biology Database |
| 915 | _ | _ | |a Nationallizenz |0 StatID:(DE-HGF)0420 |2 StatID |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1030 |2 StatID |b Current Contents - Life Sciences |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1150 |2 StatID |b Current Contents - Physical, Chemical and Earth Sciences |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l JARA-FIT |x 1 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
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