TY  - JOUR
AU  - Mairoser, T.
AU  - Schmehl, A.
AU  - Melville, A.
AU  - Heeg, T.
AU  - Zander, W.
AU  - Schubert, J.
AU  - Shai, D.
AU  - Monkman, E.J.
AU  - Shen, K.M.
AU  - Regier, T.Z.
AU  - Schlom, D.G.
AU  - Mannhart, J.
TI  - Influence of the substrate temperature on the Curie temperature and charge carrier density of epitaxial Gd-doped EuO films
JO  - Applied physics letters
VL  - 98
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-15164
SP  - 102110
PY  - 2011
N1  - We are grateful to Charles Brooks for performing some of the XRD measurements. E. J. M. acknowledges NSERC for their support. This work was supported by the DFG (Grant No. TRR 80), the EC (oxIDes), AFOSR (Grant No. FA9550-10-1-0123), and the NSF (Grant No. DMR-0820404).
AB  - Rare earth doping is a standard, yet experimentally poorly understood method to increase the Curie temperature (T-C) of the ferromagnetic semiconductor EuO. Here, we report on the charge carrier density (n) and the T-C of commonly used 4.2 at. % Gd-doped EuO films grown by molecular-beam epitaxy on (110) oriented YAlO3 substrates at various substrate temperatures (T-sub). Increasing T-sub leads to a decrease in n and T-C. For high substrate temperatures the Gd-doping is rendered completely inactive: n and T-C drop to the values of undoped EuO. (C) 2011 American Institute of Physics. [doi:10.1063/1.3563708]
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000288277200036
DO  - DOI:10.1063/1.3563708
UR  - https://juser.fz-juelich.de/record/15164
ER  -