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@ARTICLE{Mairoser:15164,
      author       = {Mairoser, T. and Schmehl, A. and Melville, A. and Heeg, T.
                      and Zander, W. and Schubert, J. and Shai, D. and Monkman,
                      E.J. and Shen, K.M. and Regier, T.Z. and Schlom, D.G. and
                      Mannhart, J.},
      title        = {{I}nfluence of the substrate temperature on the {C}urie
                      temperature and charge carrier density of epitaxial
                      {G}d-doped {E}u{O} films},
      journal      = {Applied physics letters},
      volume       = {98},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-15164},
      pages        = {102110},
      year         = {2011},
      note         = {We are grateful to Charles Brooks for performing some of
                      the XRD measurements. E. J. M. acknowledges NSERC for their
                      support. This work was supported by the DFG (Grant No. TRR
                      80), the EC (oxIDes), AFOSR (Grant No. FA9550-10-1-0123),
                      and the NSF (Grant No. DMR-0820404).},
      abstract     = {Rare earth doping is a standard, yet experimentally poorly
                      understood method to increase the Curie temperature (T-C) of
                      the ferromagnetic semiconductor EuO. Here, we report on the
                      charge carrier density (n) and the T-C of commonly used 4.2
                      at. $\%$ Gd-doped EuO films grown by molecular-beam epitaxy
                      on (110) oriented YAlO3 substrates at various substrate
                      temperatures (T-sub). Increasing T-sub leads to a decrease
                      in n and T-C. For high substrate temperatures the Gd-doping
                      is rendered completely inactive: n and T-C drop to the
                      values of undoped EuO. (C) 2011 American Institute of
                      Physics. [doi:10.1063/1.3563708]},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-9},
      ddc          = {530},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000288277200036},
      doi          = {10.1063/1.3563708},
      url          = {https://juser.fz-juelich.de/record/15164},
}