Influence of the substrate temperature on the Curie temperature and charge carrier density of epitaxial Gd-doped EuO films

Mairoser, T.; Mannhart, J.; Schlom, D.G.; Zander, W.; Regier, T.Z.; Monkman, E.J.; Shen, K.M.; Heeg, T.; Shai, D.; Schubert, J.; Schmehl, A.; Melville, A.

doi:10.1063/1.3563708

Journal Article

Influence of the substrate temperature on the Curie temperature and charge carrier density of epitaxial Gd-doped EuO films

Mairoser, T. ; Schmehl, A. ; Melville, A. ; Heeg, T. ; Zander, W.FZJ* ; Schubert, J.FZJ* ; Shai, D. ; Monkman, E. J. ; Shen, K. M. ; Regier, T. Z. ; Schlom, D. G. ; Mannhart, J.

2011
American Institute of Physics Melville, NY

Applied physics letters 98, 102110 (2011) [10.1063/1.3563708]

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Please use a persistent id in citations: http://hdl.handle.net/2128/7292 doi:10.1063/1.3563708

Abstract: Rare earth doping is a standard, yet experimentally poorly understood method to increase the Curie temperature (T-C) of the ferromagnetic semiconductor EuO. Here, we report on the charge carrier density (n) and the T-C of commonly used 4.2 at. % Gd-doped EuO films grown by molecular-beam epitaxy on (110) oriented YAlO3 substrates at various substrate temperatures (T-sub). Increasing T-sub leads to a decrease in n and T-C. For high substrate temperatures the Gd-doping is rendered completely inactive: n and T-C drop to the values of undoped EuO. (C) 2011 American Institute of Physics. [doi:10.1063/1.3563708]

Keyword(s): J

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Physics, Applied

Note: We are grateful to Charles Brooks for performing some of the XRD measurements. E. J. M. acknowledges NSERC for their support. This work was supported by the DFG (Grant No. TRR 80), the EC (oxIDes), AFOSR (Grant No. FA9550-10-1-0123), and the NSF (Grant No. DMR-0820404).

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