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@ARTICLE{Minamisawa:15165,
      author       = {Minamisawa, R.A. and Habicht, S. and Buca, D. and Carius,
                      R. and Trellenkamp, S. and Bourdelle, K.K. and Mantl, S.},
      title        = {{E}lastic strain and dopant activation in ion implanted
                      strained {S}i nanowires},
      journal      = {Journal of applied physics},
      volume       = {108},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-15165},
      pages        = {124908},
      year         = {2010},
      note         = {The authors would like to thank Mr. W. Michelsen for
                      performing the ion implantations, Mrs. Steffi Lenk for the
                      electron microscopy, and Mr. M. Hulsbeck for the Raman
                      spectroscopy measurements. This work was partially supported
                      by the German Federal Ministry of Education and Research via
                      the MEDEA + project DECISIF (2T104) and by the European
                      Community through Nanosil network of excellence (FP7 Grant
                      No. 216171).},
      abstract     = {Strained Si nanowires (NWs) are attractive for
                      deeply-scaled complementary metal-oxide-semiconductor
                      devices due to the combination of enhanced carrier mobility
                      and excellent electrostatic control as was demonstrated with
                      trigate metal-oxide-semiconductor field effect transistors.
                      The challenge in using strained Si NWs for devices is to
                      preserve the elastic strain during the required processing
                      steps. In this work we investigated the influence of
                      fundamental processing steps like patterning and dopant ion
                      implantation on the structural and transport properties of
                      strained Si layers and NWs on silicon-on-insulator (SOI)
                      substrates. NWs with widths down to 35 nm, fabricated on 25
                      nm strained SOI and implanted to doses ranging from 5 x
                      10(14) to 2 x 10(15) ions/cm(2) were investigated. We show
                      that strain conservation and a low sheet resistivity of 6.2
                      x 10(-4) Omega cm, close to the layer resistivity, can only
                      be obtained if the NWs are patterned on doped layers. For
                      NWs directly implanted to doses above 1 x 10(15) ions/cm(2),
                      complete strain relaxation and structural disorder by solid
                      phase recrystallization were observed. In both cases, NWs
                      with widths smaller than 55 nm exhibit an increased specific
                      resistivity. (C) 2010 American Institute of Physics.
                      [doi:10.1063/1.3520665]},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-9 / IEK-5 / PGI-8},
      ddc          = {530},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106 /
                      I:(DE-Juel1)IEK-5-20101013 / I:(DE-Juel1)PGI-8-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien /
                      NANOSIL - Silicon-based nanostructures and nanodevices for
                      long term nanoelectronics applications (216171)},
      pid          = {G:(DE-Juel1)FUEK412 / G:(EU-Grant)216171},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000285768800138},
      doi          = {10.1063/1.3520665},
      url          = {https://juser.fz-juelich.de/record/15165},
}