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@ARTICLE{Mikulics:151764,
      author       = {Mikulics, Martin and Hardtdegen, Hilde and Adam, Roman and
                      Grützmacher, Detlev and Gregušová, D and Novák, J and
                      Kordoš, P and Sofer, Z and Serafini, J and Zhang, J and
                      Sobolewski, Roman and Marso, M},
      title        = {{I}mpact of thermal annealing on nonequilibrium carrier
                      dynamics in single-crystal, freestanding {G}a{A}s
                      mesostructures},
      journal      = {Semiconductor science and technology},
      volume       = {29},
      number       = {4},
      issn         = {1361-6641},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2014-01653},
      pages        = {045022},
      year         = {2014},
      abstract     = {We report on the impact of thermal annealing to carrier
                      transport and transient, subpicosecond photoresponse of
                      freestanding GaAs mesostructures. Our measurements included
                      micro-photoluminescence and dark current and responsivity
                      studies as well as optical femtosecond characterization. The
                      fabricated GaAs mesostructures consisted of both mesowires
                      and platelets that were integrated into coplanar striplines
                      to form a photoconductive switch. We demonstrate that an
                      optimized annealing process of our mesostructures, performed
                      at 600 ◦C for 20 min, led to restoring bulklike properties
                      of our freestanding devices. They exhibited dark currents
                      below 600 pA at 10 V bias, responsivity of 0.2 A W−1 at 30
                      V, and mobility as high as 7300 cm2 V s−1. The annealed
                      freestanding GaAs photodetectors were characterized by
                      subpicosecond carrier relaxation dynamics with negligible
                      trapping and a cutoff frequency of 1.3 THz. The latter
                      characteristics make them excellent candidates for
                      THz-bandwidth optoelectronics.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {423 - Sensorics and bioinspired systems (POF2-423)},
      pid          = {G:(DE-HGF)POF2-423},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000333275600024},
      doi          = {10.1088/0268-1242/29/4/045022},
      url          = {https://juser.fz-juelich.de/record/151764},
}