Hauptseite > Publikationsdatenbank > Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour > print

001     151944
005     20210129213628.0
024 7 _ |a 10.1038/ncomms4473
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037 _ _ |a FZJ-2014-01784
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100 1 _ |a Aoki, Yoshitaka
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245 _ _ |a Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour
260 _ _ |a London
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700 1 _ |a Wiemann, Carsten
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700 1 _ |a Feyer, Vitaliy
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700 1 _ |a Kim, Hong-Seok
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700 1 _ |a Schneider, Claus Michael
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700 1 _ |a Ill-Yoo, Han
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700 1 _ |a Martin, Manfred
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773 _ _ |a 10.1038/ncomms4473
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|y 2014
|x 2041-1723
856 4 _ |u https://juser.fz-juelich.de/record/151944/files/FZJ-2014-01784.pdf
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