000151987 001__ 151987
000151987 005__ 20240610121004.0
000151987 0247_ $$2Handle$$a2128/9073
000151987 0247_ $$2ISSN$$a1866-1777
000151987 020__ $$a978-3-89336-951-5
000151987 037__ $$aFZJ-2014-01812
000151987 041__ $$aEnglish
000151987 1001_ $$0P:(DE-Juel1)139007$$aWeidlich, Phillip$$b0$$eCorresponding author$$gmale$$ufzj
000151987 245__ $$aStructure, electronic properties, and interactions of defects in epitaxial GaN layers$$f2013-06-05
000151987 260__ $$aJülich$$bForschungszentrum Jülich GmbH Zentralbibliothek, Verlag$$c2014
000151987 300__ $$a139 S.
000151987 3367_ $$0PUB:(DE-HGF)11$$2PUB:(DE-HGF)$$aDissertation / PhD Thesis$$bphd$$mphd$$s1441025626_13298
000151987 3367_ $$0PUB:(DE-HGF)3$$2PUB:(DE-HGF)$$aBook$$mbook
000151987 3367_ $$02$$2EndNote$$aThesis
000151987 3367_ $$2DRIVER$$adoctoralThesis
000151987 3367_ $$2BibTeX$$aPHDTHESIS
000151987 3367_ $$2DataCite$$aOutput Types/Dissertation
000151987 3367_ $$2ORCID$$aDISSERTATION
000151987 4900_ $$aSchriften des Forschungszentrums Jülich. Reihe Information / information$$v34
000151987 502__ $$aRWTH Aachen, Diss., 2013$$bDr.$$cRWTH Aachen$$d2013
000151987 500__ $$3POF3_Assignment on 2016-02-29
000151987 520__ $$aGallium nitride (GaN) is a III-V semiconductor which is widely used in optoelectronic devices, especially in lasers and light emitting diodes (LEDs). Due to its wide band gap of approximately 3.4 eV at room temperature [1], GaN - like related ternary group III-nitride semiconductors - is a material of choice for the emission of light within the blue to near ultraviolet range [2]. Due to its application in ultraviolet LEDs, GaN is deployed in microelectronic devices, but also finds use in the medical field both for diagnostic and therapeutic purposes as well as for the purication of air and water [3]. At present, the efficacy of devices based on GaN is, however, limited by the quality of the bulk crystal material. Since there are hardly any large bulk substrates available [4], almost all GaN films are grown on substrates which exhibit a large lattice mismatch as well as a large thermal mismatch using heteroepitaxy or are deposited onto pseudo substrates which themselves were nucleated on mismatched substrates [3]. The mismatch induces high concentrations of defects, of which dislocations negatively affect the properties of the device in particular. Dislocations in transistors, for example, can cause a large reverse bias leakage [5] and threading dislocations have been associated with luminescence at various wavelengths in GaN epitaxial layers [6]. Although group III-nitrides and especially GaN are already being used commercially in optoelectronic devices, the knowledge of the general properties of defects within these materials and of the interactions between the defects in particular is still limited: The electronic properties of dislocations, for example, are debated controversially, with different groups reporting either only charged or only uncharged dislocations or a mixture of both [7{14] depending on the type of dislocation as well as on the material investigated. In addition, various ideas on the origin of charges spanning from reconstructions of the dislocation cores, impurities, point defects, to strain [14{21] are being discussed. Similarly, the electronic [...]
000151987 536__ $$0G:(DE-HGF)POF3-141$$a141 - Controlling Electron Charge-Based Phenomena (POF3-141)$$cPOF3-141$$fPOF III$$x0
000151987 650_7 $$0V:(DE-588b)4012494-0$$2GND$$aDissertation$$xDiss.
000151987 8564_ $$uhttps://juser.fz-juelich.de/record/151987/files/FZJ-2014-01812.pdf$$yOpenAccess
000151987 909CO $$ooai:juser.fz-juelich.de:151987$$pdnbdelivery$$pVDB$$pdriver$$popen_access$$popenaire
000151987 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000151987 9141_ $$y2014
000151987 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)139007$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000151987 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000151987 9131_ $$0G:(DE-HGF)POF3-141$$1G:(DE-HGF)POF3-140$$2G:(DE-HGF)POF3-100$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000151987 920__ $$lyes
000151987 9201_ $$0I:(DE-Juel1)PGI-5-20110106$$kPGI-5$$lMikrostrukturforschung$$x0
000151987 9801_ $$aFullTexts
000151987 980__ $$aphd
000151987 980__ $$aVDB
000151987 980__ $$aUNRESTRICTED
000151987 980__ $$abook
000151987 980__ $$aI:(DE-Juel1)PGI-5-20110106
000151987 981__ $$aI:(DE-Juel1)ER-C-1-20170209