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@PHDTHESIS{Weidlich:151987,
      author       = {Weidlich, Phillip},
      title        = {{S}tructure, electronic properties, and interactions of
                      defects in epitaxial {G}a{N} layers},
      volume       = {34},
      school       = {RWTH Aachen},
      type         = {Dr.},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2014-01812},
      isbn         = {978-3-89336-951-5},
      series       = {Schriften des Forschungszentrums Jülich. Reihe Information
                      / information},
      pages        = {139 S.},
      year         = {2014},
      note         = {RWTH Aachen, Diss., 2013},
      abstract     = {Gallium nitride (GaN) is a III-V semiconductor which is
                      widely used in optoelectronic devices, especially in lasers
                      and light emitting diodes (LEDs). Due to its wide band gap
                      of approximately 3.4 eV at room temperature [1], GaN - like
                      related ternary group III-nitride semiconductors - is a
                      material of choice for the emission of light within the blue
                      to near ultraviolet range [2]. Due to its application in
                      ultraviolet LEDs, GaN is deployed in microelectronic
                      devices, but also finds use in the medical field both for
                      diagnostic and therapeutic purposes as well as for the
                      purication of air and water [3]. At present, the efficacy of
                      devices based on GaN is, however, limited by the quality of
                      the bulk crystal material. Since there are hardly any large
                      bulk substrates available [4], almost all GaN films are
                      grown on substrates which exhibit a large lattice mismatch
                      as well as a large thermal mismatch using heteroepitaxy or
                      are deposited onto pseudo substrates which themselves were
                      nucleated on mismatched substrates [3]. The mismatch induces
                      high concentrations of defects, of which dislocations
                      negatively affect the properties of the device in
                      particular. Dislocations in transistors, for example, can
                      cause a large reverse bias leakage [5] and threading
                      dislocations have been associated with luminescence at
                      various wavelengths in GaN epitaxial layers [6]. Although
                      group III-nitrides and especially GaN are already being used
                      commercially in optoelectronic devices, the knowledge of the
                      general properties of defects within these materials and of
                      the interactions between the defects in particular is still
                      limited: The electronic properties of dislocations, for
                      example, are debated controversially, with different groups
                      reporting either only charged or only uncharged dislocations
                      or a mixture of both [7{14] depending on the type of
                      dislocation as well as on the material investigated. In
                      addition, various ideas on the origin of charges spanning
                      from reconstructions of the dislocation cores, impurities,
                      point defects, to strain [14{21] are being discussed.
                      Similarly, the electronic [...]},
      keywords     = {Dissertation (GND)},
      cin          = {PGI-5},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {141 - Controlling Electron Charge-Based Phenomena
                      (POF3-141)},
      pid          = {G:(DE-HGF)POF3-141},
      typ          = {PUB:(DE-HGF)11 / PUB:(DE-HGF)3},
      url          = {https://juser.fz-juelich.de/record/151987},
}